参数资料
| 型号： | HIP2100EVAL2 |
| 厂商： | Intersil |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD 48VDC-5UDC CONVERTER |
| 标准包装： | 1 |
| 主要目的： | 电源管理，半 H 桥驱动器（外部 FET） |
| 已用 IC / 零件： | HIP2100 |
| 已供物品： | 板 |
HIP2100
Absolute Maximum Ratings
Supply Voltage, V DD, V HB -V HS (Notes 3, 4) . . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V DD +0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . . . . V HS -0.3V to V HB +0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V DD to HB diode . . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Maximum Recommended Operating Conditions
Supply Voltage, V DD . . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 50
EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0
QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5
DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0
Max Power Dissipation at +25°C in Free Air (SOIC, Note 5) . . . . 1.3W
Max Power Dissipation at +25°C in Free Air (EPSOIC, Note 6) . . 3.1W
Max Power Dissipation at +25°C in Free Air (QFN, Note 6) . . . . . 3.3W
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
Voltage on HS. . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . . V HS +8V to V HS +14.0V and V DD -1V to V DD +100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
3. The HIP2100 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V SS unless otherwise specified.
5. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ JC, the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified.
T J = +25°C
T J = -40°C TO +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
SUPPLY CURRENTS
V DD Quiescent Current
V DD Operating Current
Total HB Quiescent Current
Total HB Operating Current
HB to V SS Current, Quiescent
HB to V SS Current, Operating
I DD
I DDO
I HB
I HBO
I HBS
I HBSO
LI = HI = 0V
f = 500kHz
LI = HI = 0V
f = 500kHz
V HS = V HB = 114V
f = 500kHz
-
-
-
-
-
-
0.1
1.5
0.1
1.5
0.05
0.7
0.15
2.5
0.15
2.5
1
-
-
-
-
-
-
-
0.2
3
0.2
3
10
-
mA
mA
mA
mA
μA
mA
INPUT PINS
Low Level Input Voltage Threshold
High Level Input Voltage Threshold
Input Voltage Hysteresis
Input Pulldown Resistance
V IL
V IH
V IHYS
R I
4
-
-
-
5.4
5.8
0.4
200
-
7
-
-
3
-
-
100
-
8
-
500
V
V
V
k Ω
UNDERVOLTAGE PROTECTION
V DD Rising Threshold
V DD Threshold Hysteresis
HB Rising Threshold
HB Threshold Hysteresis
V DDR
V DDH
V HBR
V HBH
7
-
6.5
-
7.3
0.5
6.9
0.4
7.8
-
7.5
-
6.5
-
6
-
8
-
8
-
V
V
V
V
4
FN4022.14
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