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参数资料
| 型号： | IDT70T3509MS133BP |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 16/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 36MBIT 133MHZ 256BGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 36M（1M x 36） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-BGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70T3509MS133BP |
IDT70T3509M
High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Timing Waveform of Write with Address Counter Advance
(Flow-through or Pipelined Inputs) (1)
t CYC2
CLK
t CH2
t CL2
t SA
t HA
A 0 - A 18
An
t SA
A 19 (7)
INTERNAL (3)
ADDRESS
An (5)
An + 1
An + 2
An + 3
An + 4
t SAD t HAD
ADS
t SCN t HCN
CNTEN
t SD t HD
(5)
DATA IN
Dn
Dn + 1
Dn + 1
Dn + 2
Dn + 3
Dn + 4
(7)
WRITE
EXTERNAL
ADDRESS
WRITE WRITE
WITH COUNTER COUNTER HOLD
WRITE WITH COUNTER
5682 drw 17a
Timing Waveform of Counter Repeat (2,6)
t CYC2
CLK
t SA t HA
A 0 - A 18
An
t SA
A 19 (7)
INTERNAL (3)
ADDRESS
An
An+1
An+2
An+2
An
An+1
An+2
An+2
t SAD t HAD
ADS
t SW t HW
R/ W
t SCN t HCN
CNTEN
REPEAT
(4)
t SRPT t HRPT
t SD t HD
,
DATA IN
D 0
D 1
D 2
D 3
t CD1
DATA OUT
An
An+1
An+2
An+2
(7)
WRITE TO ADVANCE
ADS COUNTER
ADDRESS WRITE TO
An An+1
NOTES:
1. CE 0 , BE n , and R/ W = V IL ; CE 1 and REPEAT = V IH .
ADVANCE
COUNTER
WRITE TO
An+2
HOLD
COUNTER
WRITE TO
An+2
REPEAT
READ LAST
ADS
ADDRESS
An
ADVANCE
COUNTER
READ
An+1
,
ADVANCE
COUNTER
READ
An+2
HOLD
COUNTER
READ
An+2
5682 drw 18a
2. CE 0 , BE n = V IL ; CE 1 = V IH .
3. The "Internal Address" is equal to the "External Address" when ADS = V IL and equals the counter output when ADS = V IH .
4. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid
ADS load will be accessed. For more information on REPEAT function refer to Truth Table II. A 19 must be in the appropriate state when using the REPEAT
function to guarantee the correct address location is loaded.
5. CNTEN = V IL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is
written to during this cycle.
6. For Pipelined Mode user should add 1 cycle latency for outputs as per timing waveform of read cycle for pipelined operations.
7. Address A 19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000 H through 7FFFF H the
value of a A 19 is 0, while for physical addresses 80000 H through FFFFF H the value of A 19 is 1. The user needs to keep track of the device counter and make
sure that A 19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation. As shown this
transition reflects An = 7FFFF H or FFFFF H .
16
6.42
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相关代理商/技术参数 |
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| IDT70T3509MS133BPG | 功能描述:IC SRAM 36MBIT 133MHZ 256BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3509MS133BPGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 36MBIT 133MHZ 256CABGA |
| IDT70T3509MS133BPI | 功能描述:IC SRAM 36MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| IDT70T3519S133BC | 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3519S133BC8 | 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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