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| 型号： | IDT70T3509MS133BP |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 36MBIT 133MHZ 256BGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 36M（1M x 36） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-BGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70T3509MS133BP |
IDT70T3509M
High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Absolute Maximum Ratings (1)
Symbol
Rating
Com'l
Unit
& Ind
V TERM
(V DD )
V TERM (2)
(V DDQ )
V TERM (2)
(INPUTS and I/O's)
V DD Terminal Voltage
with Respect to GND
V DDQ Terminal Voltage
with Respect to GND
Input and I/O Terminal
Voltage with Respect to GND
-0.5 to 3.6
-0.3 to V DDQ + 0.3
-0.3 to V DDQ + 0.3
V
V
V
T BIAS (3)
T STG
T JN
Temperature Under Bias
Storage Temperature
Junction Temperature
-55 to +125
-65 to +150
+150
o
o
o
C
C
C
I OUT (For V DDQ = 3.3V) DC Output Current
I OUT (For V DDQ = 2.5V) DC Output Current
NOTES:
50
40
mA
mA
5682 tbl 06
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed V DDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Capacitance (1)
(T A = +25°C, F = 1.0MH Z ) BGA ONLY
C OUT
Symbol
C IN
(2)
Parameter
Input Capacitance
Output Capacitance
Conditions
V IN = 0V
V OUT = 0V
Max.
35
35
Unit
pF
pF
5682 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C OUT also references C I/O .
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V DD = 2.5V ± 100mV)
70T3509MS
JTAG & ZZ Input Leakage Current
Output Leakage Current
Symbol
|I LI |
|I LI |
|I LO |
Parameter
Input Leakage Current (1)
(1,3)
(1,2)
Test Conditions
V DDQ = Max., V IN = 0V to V DDQ
V DD = Max. , V IN = 0V to V DD
CE 0 = V IH and CE 1 = V IL , V OUT = 0V to V DDQ
Min.
___
___
___
Max.
20
60
20
Unit
μA
μA
μA
V OL (3.3V)
Output Low Voltage
(1)
I OL = +4mA, V DDQ = Min.
___
0.4
V
V OH (3.3V)
Output High Voltage
(1)
I OH = -4mA, V DDQ = Min.
2.4
___
V
V OL (2.5V)
V OH (2.5V)
Output Low Voltage (1)
Output High Voltage (1)
I OL = +2mA, V DDQ = Min.
I OH = -2mA, V DDQ = Min.
___
2.0
0.4
___
V
V
NOTES:
1. V DDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
7
6.42
5682 tbl 08
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| IDT70T3509MS133BPG | 功能描述:IC SRAM 36MBIT 133MHZ 256BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3509MS133BPGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 36MBIT 133MHZ 256CABGA |
| IDT70T3509MS133BPI | 功能描述:IC SRAM 36MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| IDT70T3519S133BC | 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3519S133BC8 | 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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