- 您现在的位置：买卖IC网 > Datasheet目录328 > IDT70T3509MS133BP (IDT, Integrated Device Technology Inc)IC SRAM 36MBIT 133MHZ 256BGA Datasheet资料下载
参数资料
| 型号： | IDT70T3509MS133BP |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 19/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 36MBIT 133MHZ 256BGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 36M（1M x 36） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 2.4 V ~ 2.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 256-BGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70T3509MS133BP |
IDT70T3509M
High-Speed 2.5V
1024K x 36 Dual-Port Synchronous Static RAM
Commercial Temperature Range
Functional Description
The IDT70T3509M provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse width is independent of the cycle time.
An asynchronous output enable is provided to ease asyn-
chronous bus interfacing. Counter enable inputs are also provided to stall
the operation of the address counters for fast interleaved
memory applications.
The combination of a HIGH on CE 0 and a LOW on CE 1 for one clock
cycle will power down the internal circuitry to reduce static power
consumption. Multiple chip enables allow easier banking of multiple
IDT70T3509Ms for depth expansion configurations. Two cycles are
required with CE 0 LOW and CE 1 HIGH to re-activate the outputs.
Width Expansion
The IDT70T3509M can be used in applications requiring expanded
width. Through combining the control signals, the devices can be grouped
as necessary to accommodate applications needing 72-bits or wider.
Sleep Mode
The IDT70T3509M is equipped with an optional sleep or low power
mode on both ports. The sleep mode pin on both ports is asynchronous
and active high. During normal operation, the ZZ pin is pulled low. When
ZZ is pulled high, the port will enter sleep mode where it will meet lowest
possible power conditions. The sleep mode timing diagram shows the
modes of operation: Normal Operation, No Read/Write Allowed and Sleep
Mode.
For normal operation all inputs must meet setup and hold times prior
to sleep and after recovering from sleep. Clocks must also meet cycle high
and low times during these periods. Three cycles prior to asserting ZZ
(ZZx = V IH ) and three cycles after de-asserting ZZ (ZZx = V IL ), the device
must be disabled via the chip enable pins. If a write or read operation occurs
during these periods, the memory array may be corrupted. Validity of data
out from the RAM cannot be guaranteed immediately after ZZ is asserted
(prior to being in sleep). When exiting sleep mode, the device must be in
Read mode (R/ W x = V IH )when chip enable is asserted, and the chip
enable must be valid for one full cycle before a read will result in the output
of valid data.
During sleep mode the RAM automatically deselects itself. The RAM
disconnects its internal clock buffer. The external clock may continue to run
without impacting the RAMs sleep current (I ZZ ). All outputs will remain in
high-Z state while in sleep mode. All inputs are allowed to toggle. The RAM
will not be selected and will not perform any reads or writes.
19
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70T3519S133DRI | IC SRAM 9MBIT 133MHZ 208QFP |
| IDT70T3539MS166BCG | IC SRAM 18MBIT 166MHZ 256BGA |
| IDT70T3719MS166BBG | IC SRAM 18MBIT 166MHZ 324BGA |
| IDT70T633S10BCI | IC SRAM 9MBIT 10NS 256BGA |
| IDT70T651S12DRI | IC SRAM 9MBIT 12NS 208QFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T3509MS133BPG | 功能描述:IC SRAM 36MBIT 133MHZ 256BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3509MS133BPGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 36MBIT 133MHZ 256CABGA |
| IDT70T3509MS133BPI | 功能描述:IC SRAM 36MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| IDT70T3519S133BC | 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3519S133BC8 | 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。