参数资料
型号: IDT70T653MS15BC8
厂商: IDT, Integrated Device Technology Inc
文件页数: 6/24页
文件大小: 0K
描述: IC SRAM 18MBIT 15NS 256BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 18M(512K x 36)
速度: 15ns
接口: 并联
电源电压: 2.4 V ~ 2.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 带卷 (TR)
其它名称: 70T653MS15BC8
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Recommended Operating
Temperature and Supply Voltage (1)
Industrial and Commercial Temperature Ranges
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
Grade
Temperature
GND
V DD
V DD
Core Supply Voltage
2.4
2.5
2.6
V
Commercial
Industrial
0 O C to +70 O C
-40 O C to +85 O C
0V
0V
2.5V + 100mV
2.5V + 100mV
V DDQ
V SS
I/O Supply Voltage
Ground
Input High Volltage
(3)
2.4
0
2.5
0
2.6
0
V
V
NOTE:
5679 tbl 04
V IH
(Address, Control &
Data I/O Inputs) (3)
1.7
____
V DDQ + 100mV (2)
V
1. This is the parameter TA. This is the "instant on" case temperature.
V IH
Input High Voltage
JTAG
_
1.7
____
V DD + 100mV (2)
V
Capacitance (1)
(T A = +25°C, F = 1.0MH Z ) PQFP ONLY
V IH
V IL
Input High Voltage -
ZZ, OP T
Input Low Voltage
V DD - 0.2V
-0.3 (1)
____
____
V DD + 100mV (2)
0.7
V
V
Symbol
C IN
Parameter
Input Capacitance
Conditions
V IN = 0V
Max.
15
Unit
pF
V IL
Input Low Voltage -
ZZ, OP T
-0.3 (1)
____
0.2
V
5679 tbl 05
C OUT (2)
Output Capacitance
V OUT = 0V
10.5
pF
NOTES:
1. V IL (min.) = -1.0V for pulse width less than t RC /2 or 5ns, whichever is less.
5679 tbl 08
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. C OUT also references C I/O .
2. V IH (max.) = V DDQ + 1.0V for pulse width less than t RC /2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V SS (0V), and V DDQX for that port must be
supplied as indicated above.
Absolute Maximum Ratings (1)
Recommended DC Operating
Conditions with V DDQ at 3.3V
Symbol Parameter Min. Typ. Max.
Unit
Symbol
Rating
Commercial
& Industrial
Unit
V DD
Core Supply Voltage
2.4
2.5
2.6
V
V DDQ
I/O Supply Voltage (3)
3.15
3.3
3.45
V
V TERM
V TERM
(V DD )
(2)
(V DDQ )
V DD Terminal Voltage
with Respect to GND
V DDQ Terminal Voltage
with Respect to GND
-0.5 to 3.6
-0.3 to V DDQ + 0.3
V
V
V SS
V IH
Ground
Input High Voltage
(Address, Control
&Data I/O Inputs) (3)
0
2.0
0
____
0
V DDQ + 150mV (2)
V
V
V TERM(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to V DDQ + 0.3
V
V IH
Input High Voltage
JTAG
_
1.7
____
V DD + 100mV (2)
V
-0.3
T BIAS (3)
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
o
o
C
C
V IH
V IL
Input High Voltage -
ZZ, OP T
Input Low Voltage
V DD - 0.2V
(1)
____
____
V DD + 100mV (2)
0.8
V
V
-0.3
T JN
Temperature
Junction Temperature
+150
o
C
V IL
Input Low Voltage -
ZZ, OP T
(1)
____
0.2
V
5679 tbl 06
I OUT (For V DDQ = 3.3V) DC Output Current
I OUT (For V DDQ = 2.5V) DC Output Current
50
40
mA
mA
NOTES:
1. V IL (min.) = -1.0V for pulse width less than t RC /2 or 5ns, whichever is less.
2. V IH (max.) = V DDQ + 1.0V for pulse width less than t RC /2 or 5ns, whichever is
5679 tbl 07
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed V DDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
6
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V DD (2.5V), and V DDQX for that port must be
supplied as indicated above.
相关PDF资料
PDF描述
MPC8544AVTANG IC MPU POWERQUICC III 783-FCBGA
1-1734798-2 CONN HOUSING FPC 12POS R/A SMD
IDT70T3539MS133BC8 IC SRAM 18MBIT 133MHZ 256BGA
1-2013928-4 CONN FPC 37POS .3MM FLIP LOC SMD
IDT70V5388S133BC8 IC SRAM 1.125MBIT 133MHZ 256BGA
相关代理商/技术参数
参数描述
IDT70T659S10BC 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T659S10BC8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T659S10BCI 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T659S10BCI8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T659S10BF 功能描述:IC SRAM 4MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)