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| 型号： | IDT70V26L35G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 13/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 35NS 84PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 256K（16K x 16） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 84-BPGA |
| 供应商设备封装： | 84-PGA（27.94x27.94） |
| 包装： | 托盘 |
| 其它名称： | 70V26L35G |
IDT70V26S/L
High-Speed 16K x 16 Dual-Port Static RAM
Truth Table III — Address BUSY
Arbitration
Industrial and Commercial Temperature Ranges
Inputs
Outputs
CE L
X
H
X
L
CE R
X
X
H
L
A 0L -A 13L
A 0R -A 13R
NO MATCH
MATCH
MATCH
MATCH
BUSY L (1)
H
H
H
(2)
BUSY R (1)
H
H
H
(2)
Function
Normal
Normal
Normal
Write Inhibit (3)
NOTES:
2945 tbl 14
1. Pins BUSY L and BUSY R are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY X outputs on the IDT70V26 are push
pull, not open drain outputs. On slaves the BUSY X input internally inhibits writes.
2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. H if the inputs to the opposite port became stable after the address and enable
inputs of this port. If t APS is not met, either BUSY L or BUSY R = LOW will result. BUSY L and BUSY R outputs cannot be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when
BUSY R outputs are driving LOW regardless of actual logic level on the pin.
Truth Table IV — Example of Semaphore Procurement Sequence (1,2,3)
Functions
No Action
Left Port Writes "0" to Semaphore
Right Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "1" to Semaphore
Right Port Writes "0" to Semaphore
Right Port Writes "1" to Semaphore
Left Port Writes "0" to Semaphore
Left Port Writes "1" to Semaphore
NOTE:
D 0 - D 15 Left
1
0
0
1
1
0
1
1
1
0
1
D 0 - D 15 Right
1
1
1
0
0
1
1
0
1
1
1
Status
Semaphore free
Left port has semaphore token
No change. Right side has no write access to semaphore
Right port obtains semaphore token
No change. Left port has no write access to semaphore
Left port obtains semaphore token
Semaphore free
Right port has semaphore token
Semaphore free
Left port has semaphore token
Semaphore free
2945 tbl 15
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V26.
2. There are eight semaphore flags written to via I/O 0 and read from all I/O's (I/O 0 -I/O 15 ). These eight semaphores are addressed by A 0 -A 2 .
3. CE = V IH , SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Functional Description
The IDT70V26 provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT70V26 has an automatic power down
feature controlled by CE . The CE controls on-chip power down circuitry
that permits the respective port to go into a standby mode when not
selected ( CE HIGH). When a port is enabled, access to the entire
memory array is permitted.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
RAM have accessed the same location at the same time. It also allows
one of the two accesses to proceed and signals the other side that the
RAM is “busy”. The BUSY pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted from the side that receives a BUSY indication, the
write signal is gated internally to prevent the write from proceeding.
The use of BUSY logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the BUSY outputs
together and use any BUSY indication as an interrupt source to flag an
illegal or illogical operation. If the write inhibit function of BUSY logic is
not desirable, the BUSY logic can be disabled by placing the part in
slave mode with the M/ S pin. Once in slave mode the BUSY pin
operates solely as a write inhibit input pin. Normal operation can be
programmed by tying the BUSY pins HIGH. If desired, unintended
13
6.42
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| IDT70V26L55J | 功能描述:IC SRAM 256KBIT 55NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
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