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参数资料
| 型号： | IRF614STRL |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 2.7 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 172K |
| 代理商： | IRF614STRL |
Document Number: 91026
www.vishay.com
S11-1063-Rev. C, 30-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRF614S, SiHF614S
Vishay Siliconix
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications
because
of
its low
internal
connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 , IAS = 2.7 A (see fig. 12).
c. ISD 2.7 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
250
RDS(on) ()VGS = 10 V
2.0
Qg (Max.) (nC)
8.2
Qgs (nC)
1.8
Qgd (nC)
4.5
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G D
S
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF614S-GE3
-
SiHF614STRR-GE3a
Lead (Pb)-free
IRF614SPbF
IRF614STRLPbFa
IRF614STRRPbFa
SiHF614S-E3
SiHF614STL-E3a
SiHF614STR-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
250
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
2.7
A
TC = 100 °C
1.7
Pulsed Drain Currenta
IDM
8.0
Linear Derating Factor
0.29
W/°C
Linear Derating Factor (PCB Mount)e
0.025
Single Pulse Avalanche Energyb
EAS
61
mJ
Avalanche Currenta
IAR
2.7
A
Repetitive Avalanche Energya
EAR
3.6
mJ
Maximum Power Dissipation
TC = 25 °C
PD
36
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.1
Peak Diode Recovery dV/dtc
dV/dt
4.8
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply
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