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参数资料
| 型号： | IRF614STRL |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | JFETs |
| 英文描述： | 2.7 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 172K |
| 代理商： | IRF614STRL |
www.vishay.com
Document Number: 91026
2
S11-1063-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF614S, SiHF614S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-40
Maximum Junction-to-Case (Drain)
RthJC
-3.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
250
-
V
VDS Temperature Coefficient
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.39
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
-
25
μA
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 1.6 Ab
--
2.0
Forward Transconductance
gfs
VDS = 50 V, ID = 1.6 Ab
0.90
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
140
-
pF
Output Capacitance
Coss
-42
-
Reverse Transfer Capacitance
Crss
-9.6
-
Total Gate Charge
Qg
VGS = 10 V
ID = 2.7 A, VDS = 200 V,
see fig. 6 and 13b
--
8.2
nC
Gate-Source Charge
Qgs
--
1.8
Gate-Drain Charge
Qgd
--
4.5
Turn-On Delay Time
td(on)
VDD = 125 V, ID = 2.7 A,
Rg = 24 , RD = 45 , see fig. 10b
-7.0
-
ns
Rise Time
tr
-7.6
-
Turn-Off Delay Time
td(off)
-16
-
Fall Time
tf
-7.0
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5
-
nH
Internal Source Inductance
LS
-7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
2.7
A
Pulsed Diode Forward Currenta
ISM
--
8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μsb
-
190
390
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.64
1.3
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
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