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| 型号： | IRS2609DSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 10/25页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS2609DSPbF
Integrated Bootstrap Functionality
The IRS2609D embeds an integrated bootstrap FET that allows an alternative drive of the bootstrap supply for a wide range of
applications. A bootstrap FET is connected between the floating supply V B and V CC (see Fig. 10).
Vcc
BootFet
Vb
Figure 10: Semplified BootFET connection
The integrated bootstrap feature can be used either in parallel with the external bootstrap network (diode and resistor) or as
a replacement of it. The use of the integrated bootstrap as a replacement of the external bootstrap network may have some
limitations at very high PWM duty cycle, corresponding to very short LIN pulses, due to the bootstrap FET equivalent
resistance RBS.
The summary for the bootstrap state follows:
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Bootstrap turns-off (immediately) or stays off when at least one of the following conditions are met :
1- /SD is low
2- /SD is high, IN is low and V B is high (> 1.1*V CC )
3- /SD is high, IN is high (DT period excluded)
4- /SD is high, IN is high and V B is high (> 1.1*V CC ) (during DT period)
Bootstrap turns-on when :
1- /SD in high, IN is low and V B is low (< 1.1(V CC ))
2- /SD in high, IN is high and V B is low (< 1.1(V CC )) (during the DT period). Please refer to the BootFET timing
diagram for more details.
www.irf.com
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJPBF_1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
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