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| 型号： | IRS2609DSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 13/25页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS2609DSPbF
However, in a real inverter circuit, the V S voltage swing does not stop at the level of the negative DC bus, rather it swings below the
level of the negative DC bus. This undershoot voltage is called “negative V S transient”.
The circuit shown in Figure 17 depicts one leg of the three phase inverter; Figures 18 and 19 show a simplified illustration of the
commutation of the current between Q1 and D2. The parasitic inductances in the power circuit from the die bonding to the PCB tracks
are lumped together in L C and L E for each IGBT. When the high-side switch is on, V S1 is below the DC+ voltage by the voltage drops
associated with the power switch and the parasitic elements of the circuit. When the high-side power switch turns off, the load current
momentarily flows in the low-side freewheeling diode due to the inductive load connected to V S1 (the load is not shown in these
figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative voltage
between V S1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the V S pin).
Figure 17: Parasitic Elements
Figure 18: V S positive
Figure 19: V S negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative V S transient voltage can
exceed this range during some events such as short circuit and over-current shutdown, when di/dt is greater than in normal operation.
International Rectifier’s HVICs have been designed for the robustness required in many of today’s demanding applications. An
indication of the IRS2609D’s robustness can be seen in Figure 20, where there is represented the IRS2609D Safe Operating Area at
V BS =15V based on repetitive negative V S spikes. A negative V S transient voltage falling in the grey area (outside SOA) may lead to IC
permanent damage; viceversa unwanted functional anomalies or permanent damage to the IC do not appear if negative Vs transients
fall inside SOA.
At V BS =15V in case of -V S transients greater than -16.5 V for a period of time greater than 50 ns; the HVIC will hold by design the
high-side outputs in the off state for 4.5 μs.
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJPBF_1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
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