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| 型号： | IRS2609DSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 9/25页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS2609DSPbF
V IH
V IL
High
Low
Low
Figure 8: HIN & LIN input thresholds
Undervoltage Lockout Protection
This family of ICs provides undervoltage lockout protection on both the V CC (logic and low-side circuitry) power supply and the V BS
(high-side circuitry) power supply. Figure 9 is used to illustrate this concept; V CC (or V BS ) is plotted over time and as the waveform
crosses the UVLO threshold (V CCUV+/- or V BSUV+/- ) the undervoltage protection is enabled or disabled.
Upon power-up, should the V CC voltage fail to reach the V CCUV+ threshold, the IC will not turn-on. Additionally, if the V CC voltage
decreases below the V CCUV- threshold during operation, the undervoltage lockout circuitry will recognize a fault condition and
shutdown the high- and low-side gate drive outputs, and the FAULT pin will transition to the low state to inform the controller of the
fault condition.
Upon power-up, should the V BS voltage fail to reach the V BSUV threshold, the IC will not turn-on. Additionally, if the V BS voltage
decreases below the V BSUV threshold during operation, the undervoltage lockout circuitry will recognize a fault condition, and
shutdown the high-side gate drive outputs of the IC.
The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is sufficient to fully
enhance the power devices. Without this feature, the gates of the external power switch could be driven with a low voltage, resulting
in the power switch conducting current while the channel impedance is high; this could result in very high conduction losses within the
power device and could lead to power device failure.
Figure 9: UVLO protection
Shoot-Through Protection
The IRS2609D high-voltage ICs is equipped with shoot-through protection circuitry (also known as cross-conduction prevention
circuitry).
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJPBF_1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
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