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| 型号： | IRS2609DSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 16/25页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS2609DSPbF
The above mentioned bias condition may be encountered under the following situations:
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In a motor control application, a permanent magnet motor naturally rotating while VCC power is OFF. In this
condition, Back EMF is generated at a motor terminal which causes high voltage bias on VS nodes resulting
unwanted current flow to VCC.
Potential situations in other applications where VS/VB node voltage potential increases before the VCC voltage is
available (for example due to sequencing delays in SMPS supplying VCC bias)
Application Workaround:
Insertion of a standard p-n junction diode between VCC pin of IC and positive terminal of VCC capacitors (as illustrated in Fig.25)
prevents current conduction “out-of” VCC pin of gate driver IC. It is important not to connect the VCC capacitor directly to pin of
IC. Diode selection is based on 25V rating or above & current capability aligned to ICC consumption of IC - 100mA should cover
most application situations. As an example, Part number # LL4154 from Diodes Inc (25V/150mA standard diode) can be used.
VCC
VCC
VB
Capacitor
VSS
(or COM)
Figure 25: Diode insertion between VCC pin and VCC capacitor
Note that the forward voltage drop on the diode ( V F ) must be taken into account when biasing the VCC pin of the IC to meet
UVLO requirements. VCC pin Bias = VCC Supply Voltage – V F of Diode .
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com ; use the Site Search function and the
document number to quickly locate them. Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
www.irf.com
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相关PDF资料 |
PDF描述 |
|---|---|
| IRS26302DJTRPBF | IC GATE DRIVER 3PH BRIDGE 44PLCC |
| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
| IRS4427PBF | IC MOSFET DRIVER |
| IRS4427SPBF | IC DVR LOW SIDE DUAL 8-SOIC |
| IRS4428STRPBF | IC DVR LOW SIDE DUAL 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJPBF_1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
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