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参数资料
| 型号： | IRS2609DSPBF |
| 厂商： | International Rectifier |
| 文件页数： | 14/25页 |
| 文件大小： | 0K |
| 描述： | IC DVR MOSFET/IGBT N-CH 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 750ns |
| 电流 - 峰： | 200mA |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1382 (CN2011-ZH PDF) |
IRS2609DSPbF
Figure 20: Negative V S transient SOA for IRS2608D @ VBS=15V
Even though the IRS2609D has been shown able to handle these large negative V S transient conditions, it is highly recommended
that the circuit designer always limit the negative V S transients as much as possible by careful PCB layout and component use.
PCB Layout Tips
Distance between high and low voltage components: It’s strongly recommended to place the components tied to the floating voltage
pins (V B and V S ) near the respective high voltage portions of the device. Please see the Case Outline information in this datasheet
for the details.
Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high voltage floating
side.
Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure 21). In order to
reduce the EM coupling and improve the power switch turn on/off performance, the gate drive loops must be reduced as much as
possible. Moreover, current can be injected inside the gate drive loop via the IGBT collector-to-gate parasitic capacitance. The
parasitic auto-inductance of the gate loop contributes to developing a voltage across the gate-emitter, thus increasing the possibility
of a self turn-on effect.
Figure 21: Antenna Loops
www.irf.com
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PDF描述 |
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| IRS26310DJTRPBF | IC DRIVER MOSFET/IGBT 44-PLCC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS2609DSPBF_11 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HALF-BRIDGE DRIVER |
| IRS2609DSTRPBF | 功能描述:功率驱动器IC Hlf Brdg Drvr 600V .250A Sngl Inpt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJ | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
| IRS26302DJPBF | 功能描述:功率驱动器IC 3-Phase Bridge DRVR 600V 10 to 20V 290ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS26302DJPBF_1 | 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER |
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