参数资料
型号: IRS2609DSPBF
厂商: International Rectifier
文件页数: 4/25页
文件大小: 0K
描述: IC DVR MOSFET/IGBT N-CH 8-SOIC
标准包装: 95
配置: 半桥
输入类型: 反相和非反相
延迟时间: 750ns
电流 - 峰: 200mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 1382 (CN2011-ZH PDF)
IRS2609DSPbF
Dynamic Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, COM = V CC , C L = 1000 pF, T A = 25 °C, DT = V SS unless otherwise specified.
Symbol
Definition
Min Typ Max Units Test Conditions
t on
t off
t sd
MT
Turn-on propagation delay
Turn-off propagation delay
Shut-down propagation delay
Delay matching, HS & LS turn-on/off
750
250
250
1100
400
400
60
V S = 0 V or 600 V
V S = 0 V or 600 V
t r
Turn-on rise time
150
220
ns
V S = 0 V
t
f
Turn-off fall time
50
80
V S = 0 V
DT
MT
MDT
Deadtime: LO turn-off to HO turn-on(DT LO-HO)
HO turn-off to LO turn-on (DT HO-LO)
Delay matching time (t ON , t OFF )
Deadtime matching = DT LO-HO - DT HO-LO
&
350
530
800
60
60
V IN = 0 V & 5 V
Without external
deadtime
Static Electrical Characteristics
V BIAS (V CC , V BS ) = 15 V, V CC = COM, DT = V CC and T A = 25 °C unless otherwise specified. The V IL, V IH and I IN
parameters are referenced to V CC /COM and are applicable to the respective input leads: IN and SD. The V O, I O and
Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min Typ Max Units Test Conditions
V IH
logic “1” input voltage for HO & logic “0” for LO
2.2
V IL
V OH
V OL
I LK
I QBS
logic “0” input voltage for HO & logic “1” for LO
High level output voltage, V BIAS - V O
Low level output voltage, V O
Offset supply leakage current
Quiescent V BS supply current
0.8
0.3
45
0.8
1.4
0.6
50
70
V
I O = 20 mA
I O = 20 mA
V B = V S = 600 V
V IN = 0 V or 4 V
I QCC
Quiescent V CC supply current
1000 2000 3000
A
V IN = 0 V or 4 V
I IN+
I IN-
I SD, TH+
I SD, TH-
V CCUV+
V BSUV+
V CCUV-
V BSUV-
V CCUVH
V BSUVH
Logic “1” input bias current
Logic “0” input bias current
SD input positive going threshold
SD input negative going threshold
V CC and V BS supply undervoltage positive going
Threshold
V CC and V BS supply undervoltage negative going
Threshold
Hysteresis
8.0
7.4
5
15
10
8.9
8.2
0.7
20
2
30
20
9.8
9.0
V
V IN = 4 V
V IN = 0 V
I O+
I O-
Rbs
Output high short circuit pulsed current
Output low short circuit pulsed current
Bootstrap resistance
120
250
200
350
200
mA
Ohm
V O = 0 V,
PW ≤ 10 us
V O = 15 V,
PW ≤ 10 us
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