参数资料
型号: IRS2609DSPBF
厂商: International Rectifier
文件页数: 6/25页
文件大小: 0K
描述: IC DVR MOSFET/IGBT N-CH 8-SOIC
标准包装: 95
配置: 半桥
输入类型: 反相和非反相
延迟时间: 750ns
电流 - 峰: 200mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
产品目录页面: 1382 (CN2011-ZH PDF)
IRS2609DSPbF
Application Information and Additional Details
I nformations regarding the following topics are included as subsections within this section of the datasheet.
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IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Shut down Input
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Integrated Bootstrap Functionality
Negative V S Transient SOA
PCB Layout Tips
Integrated Bootstrap FET limitation
Additional Documentation
IGBT/MOSFET Gate Drive
The IRS2609D HVICs are designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters
associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is
defined as I O . The voltage that drives the gate of the external power switch is defined as V HO for the high-side power switch and V LO
for the low-side power switch; this parameter is sometimes generically called V OUT and in this case does not differentiate between the
high-side or low-side output voltage.
V B
(or V CC )
HO
I O+
V B
(or V CC )
HO
(or LO)
V S
+
V HO (or V LO )
-
(or LO)
V S
I O-
(or COM)
Figure 1: HVIC sourcing current
www.irf.com
(or COM)
Figure 2: HVIC sinking current
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