参数资料
| 型号： | ISL6545IBZ-T |
| 厂商： | Intersil |
| 文件页数： | 14/16页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 1 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 330kHz |
| 占空比： | 100% |
| 电源电压： | 4.5 V ~ 14.4 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 产品目录页面： | 1243 (CN2011-ZH PDF) |
| 其它名称： | ISL6545IBZ-TDKR |
ISL6545, ISL6545A
+V CC
VCC
+ V D -
BOOT
+V IN
Check that the voltage rating of the capacitor is above the
maximum V CC voltage in the system; a 16V rating should be
sufficient for a 12V system. A value of 0.1μF is typical for
many systems driving single MOSFETs.
ISL6545x
UGATE
C BOOT
Q1
If V CC is 12V, but V IN is lower (such as 5V), then another
option is to connect the BOOT pin to 12V, and remove the
-
+
VCC
PHASE
LGATE/OCSET
Q2
V G-S ≈ V CC - V D
V G-S ≈ V CC
BOOT cap (although, you may want to add a local cap from
BOOT to GND). This will make the UGATE V GS voltage
equal to (12V - 5V = 7V). That should be high enough to
drive most MOSFETs, and low enough to improve the
efficiency slightly. Do NOT leave the BOOT pin open, and try
to get the same effect by driving BOOT through V CC and the
GND
internal diode; this path is not designed for the high current
pulses that will result.
FIGURE 11. UPPER GATE DRIVE BOOTSTRAP
For low V CC voltage applications where efficiency is very
BOOTSTRAP Considerations
Figure 11 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from V CC . The boot capacitor, C BOOT ,
develops a floating supply voltage referenced to the PHASE
pin. The supply is refreshed to a voltage of V CC less the boot
diode drop (V D ) each time the lower MOSFET, Q 2 , turns on.
important, an external BOOT diode (in parallel with the
internal one) may be considered. The external diode drop
has to be lower than the internal one; the resulting higher
V G-S of the upper FET will lower its r DS(ON) . The modest
gain in efficiency should be balanced against the extra cost
and area of the external diode.
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
14
FN6305.6
March 3, 2011
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