参数资料
型号: ISL6545IBZ-T
厂商: Intersil
文件页数: 4/16页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 8-SOIC
标准包装: 1
PWM 型: 电压模式
输出数: 1
频率 - 最大: 330kHz
占空比: 100%
电源电压: 4.5 V ~ 14.4 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 标准包装
产品目录页面: 1243 (CN2011-ZH PDF)
其它名称: ISL6545IBZ-TDKR
ISL6545, ISL6545A
Absolute Maximum Ratings
Thermal Information
Supply Voltage, V CC . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V
Thermal Resistance
θ JA (°C/W)
θ JC (°C/W)
BOOT Voltage, V BOOT . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 36V
UGATE Voltage V UGATE . . . . . . . . V PHASE - 0.3V to V BOOT + 0.3V
V PHASE - 3.5V (<100ns Pulse Width, 2μJ) to V BOOT +0.3V
LGATE/OCSET Voltage, V LGATE/OCSET GND - 0.3V to V CC + 0.3V
GND - 5V (<100ns Pulse Width, 2μJ) to V CC + 0.3V
PHASE Voltage, V PHASE . . . . . . . . . .GND - 0.3V to V BOOT + 0.3V
GND - 8V (<400ns, 20μJ) to 30V (<200ns, V BOOT-GND <36V)
Upper Driver Supply Voltage, V BOOT - V PHASE . . . . . . . . . . . . .15V
-0.3V to 16V (<10ns, 10μJ)
Clamp Voltage, V BOOT - V CC . . . . . . . . . . . . . . . . . . . . . . . . . . .24V
FB, COMP/SD Voltage. . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 6V
ESD Ratings
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150V
Charged Device Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0kV
SOIC Package (Note 4) . . . . . . . . . . . . . . 95 N/A
DFN Package (Notes 5, 6). . . . . . . . . . . . 44 5.5
Maximum Junction Temperature
(Plastic Package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . -65°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
Operating Conditions
Supply Voltage, V CC . . . . +5V ±10 % , +12V ±20 % , or 6.5V to 14.4V
Ambient Temperature Range
ISL6545C, ISL6545AC. . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
ISL6545I, ISL6545AI . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-40°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air, with “direct attach” features. See
Tech Brief TB379 for details.
6. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
V CC = 12V, T J = 0 to +85°C. Boldface limits apply over the operating temperature range,
-40°C to +85°C.
MIN
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
(Note 7)
TYP
(Note 7)
UNITS
V CC SUPPLY CURRENT
Input Bias Supply Current
I VCC
V CC = 12V; disabled
4
5.2
7
mA
POWER-ON RESET
Rising V CC POR Threshold
V CC POR Threshold Hysteresis
V POR
3.9
0.30
4.1
0.35
4.3
0.40
V
V
OSCILLATOR
Switching Frequency
f OSC
f OSC
ISL6545C
ISL6545I
ISL6545AC
ISL6545AI
270
240
540
510
300
300
600
600
330
330
660
660
kHz
kHz
kHz
kHz
Ramp Amplitude
Δ V OSC
1.5
V P-P
REFERENCE
Reference Voltage Tolerance
Nominal Reference Voltage
V REF
ISL6545C
ISL6545I
-1.0
-1.5
-
-
0.600
+1.0
+1.5
%
%
V
ERROR AMPLIFIER
DC Gain
Gain-Bandwidth Product
Slew Rate
GAIN
GBWP
SR
96
20
9
dB
MHz
V/μs
GATE DRIVERS
Upper Gate Source Impedance
Upper Gate Sink Impedance
Lower Gate Source Impedance
Lower Gate Sink Impedance
R UG-SRCh
R UG-SNKh
R LG-SRCh
R LG-SNKh
V CC = 14.5V; I = 50mA
V CC = 14.5V; I = 50mA
V CC = 14.5V; I = 50mA
V CC = 14.5V; I = 50mA
3.0
2.7
2.4
2.0
Ω
Ω
Ω
Ω
4
FN6305.6
March 3, 2011
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