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参数资料
| 型号： | IXKF40N60SCD1 |
| 厂商： | IXYS |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 38A I4-PAC-5 |
| 标准包装： | 24 |
| 系列： | CoolMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 41A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 3.9V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 250nC @ 10V |
| 安装类型： | 通孔 |
| 封装/外壳： | i4-Pac?-5（3 引线） |
| 供应商设备封装： | ISOPLUS i4-PAC? |
| 包装： | 管件 |
IXKF 40N60SCD1
CoolMOS ? 1) Power MOSFET
with Series Schottky Diode and
Ultra Fast Antiparallel Diode
in High Voltage ISOPLUS i4-PAC?
V DSS
I D25
R DS(on) typ.
t rr
= 600 V
= 41 A
= 60 m Ω
= 70 ns
5
ISOPLUS i4-PAC?
Preliminary data
1
D S
T
D F
1
2
5
E72873
2
MOSFET T
Symbol
Conditions
Maximum Ratings
Features
? fast CoolMOS? 1) power MOSFET 3 rd
generation
V DSS
V GS
I D25
I D90
T VJ = 25°C to 150°C
T C = 25°C
T C = 90°C
600
± 20
41
29
V
V
A
A
- high blocking voltage
- low on resistance
- low thermal resistance due to reduced
chip thickness
? Series Schottky diode prevents current
flow through MOSFET’s body diode
Symbol
Conditions
Characteristic Values
(T VJ = 25°C, unless otherwise specified)
min. typ. max.
- very low forward voltage
- fast switching
? Ultra fast HiPerFRED? anti parallel diode
- low operating forward voltage
- fast and soft reverse recovery
R DSon
V GS(th)
MOSFET 'T' only:
V GS = 10 V; I D = 25 A T VJ = 25°C
T VJ = 125°C
MOSFET 'T & D S ' in series (pin 5, pin 2) :
V GS = 10 V; I D = 10 A T VJ = 25°C
T VJ = 125°C
V GS = 10 V; I D = 25 A T VJ = 25°C
T VJ = 125°C
V DS = 20 V; I D = 3 mA
2.1
60
135
120
170
85
145
70
3.9
m W
m W
m W
m W
m W
m W
V
- low switching losses
? ISOPLUS i4-PAC? high voltage package
- isolated back surface
- low coupling capacity between pins and
heatsink
- enlarged creepage towards heatsink
- enlarged creepage betw. high voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E 72873
I DSS
V DS = V DSS ; V GS = 0 V
T VJ = 25°C
T VJ = 150°C
1
0.3
mA
mA
Applications
CoolMOS ? is a trademark of
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
E on
E off
E rec(off)
R thJC
R thJH
V GS = ± 20 V; V DS = 0 V
V GS = 10 V; V DS = 350 V; I D = 50 A
Inductive load T VJ = 125°C
V GS = 10 V; V DS = 380 V
I D = 25 A; R G = 10 W
with heatsink compound (IXYS test setup)
250
25
120
30
18
500
50
0.7
0.3
0.22
0.5
100
0.45
0.7
nA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
Converters with
? circuit operation leading to current flow
through switches in reverse direction - e. g.
- phaseleg with inductive load
- resonant circuits
? high switching frequency
Examples
? switched mode power supplies (SMPS)
? uninterruptable power supplies (UPS)
? DC-DC converters
? welding converters
? converters for inductive heating
? drive converters
1)
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
? 2011 IXYS All rights reserved
20110201b
1-7
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| IXKG25N80C | 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKH20N60C5 | 功能描述:MOSFET 20 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKH24N60C5 | 功能描述:MOSFET 24 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKH30N60C5 | 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXKH35N60C5 | 功能描述:MOSFET 35 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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