参数资料
型号: LTC3731CG#TRPBF
厂商: Linear Technology
文件页数: 27/34页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 36-SSOP
标准包装: 2,000
系列: PolyPhase®
PWM 型: 电流模式
输出数: 1
频率 - 最大: 750kHz
占空比: 98.5%
电源电压: 4 V ~ 36 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: 0°C ~ 70°C
封装/外壳: 36-SSOP(0.209",5.30mm 宽)
包装: 带卷 (TR)
LTC3731
APPLICATIONS INFORMATION
? I
?
( R L + R SENSE ) + C OUTESR Loss
P COMPATH ≈ N ? MAX ?
? V
? ? I
?
P MAIN = N ? OUT ? ? MAX ? ( 1 + δ ) R DS(ON) + C INESR Loss
The ripple frequency is also increased by three, fur-
ther reducing the required output capacitance when
V CC < 3V OUT as illustrated in Figure 6.
The addition of more phases, by phase locking additional
controllers, always results in no net input or output
ripple at V OUT /V IN ratios equal to the number of stages
implemented. Designing a system with multiple stages
close to the V OUT /V IN ratio will significantly reduce the
ripple voltage at the input and outputs and thereby improve
efficiency, physical size and heat generation of the overall
switching power supply. Refer to Application Note?77 for
more information on PolyPhase circuits.
Efficiency Calculation
To estimate efficiency, the DC loss terms include the
input and output capacitor ESR, each MOSFET R DS(ON) ,
inductor resistance R L , the sense resistance R SENSE and
the forward drop of the Schottky rectifier at the operating
output current and temperature. Typical values for the
design example given previously in this data sheet are:
Main MOSFET R DS(ON) = 7mΩ (9mΩ at 90°C)
Sync MOSFET R DS(ON) = 7mΩ (9mΩ at 90°C)
C INESR = 20mΩ
C OUTESR = 3mΩ
R L = 2.5mΩ
R SENSE = 3mΩ
The main MOSFET is on for the duty factor V OUT /V IN and
the synchronous MOSFET is on for the rest of the period
or simply (1 – V OUT /V IN ). Assuming the ripple current is
small, the AC loss in the inductor can be made small if
a good quality inductor is chosen. The average current,
I OUT , is used to simplify the calculations. The equation
below is not exact but should provide a good technique
for the comparison of selected components and give a
result that is within 10% to 20% of the final application.
Determining the MOSFETs’ die temperature may require
iterative calculations if one is not familiar with typical
performance. A maximum operating junction temperature
of 90° to 100°C for the MOSFETs is recommended for
high reliability applications.
Common output path DC loss:
2
? N ?
This totals 3.7W + C OUTESR loss.
Total of all three main MOSFETs’ DC loss:
2
? V IN ? ? N ?
This totals 0.87W + C INESR loss (at 90°C).
Total of all three synchronous MOSFETs’ DC loss:
P SYNC = N ? 1 – OUT ? ? MAX ?
V SCHOTTKY =0.8Vat15A(0.7Vat90°C)
V OUT = 1.3V
V IN = 12V
I MAX = 45A
? V ? ? I ?
? V IN ? ? N ?
This totals 7.2W at 90°C.
2
( 1 + δ ) R DS(ON)
δ = 0.5%°C (MOSFET temperature coefficient)
Total of all three main MOSFETs’ AC loss:
N=3
f = 400kHz
P MAIN ≈ 3(V IN ) 2
45A
(2)(3)
(2 ? )(1000pF)
? ? 5V – 1.8V + 1.8V ? ? (400kHz) = 6.3W
? 1 1 ?
3731fc
27
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