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参数资料
| 型号： | M28W640ECT70ZB1E |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 |
| 封装： | 6.39 X 10.50 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-48 |
| 文件页数： | 45/54页 |
| 文件大小： | 957K |
| 代理商： | M28W640ECT70ZB1E |
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M28W640ECT, M28W640ECB
SUMMARY DESCRIPTION
The M28W640EC is a 64 Mbit (4 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at block level and programmed in-system on
a Word-by-Word basis using a 2.7V to 3.6V VDD
supply for the circuitry and a 1.65V to 3.6V VDDQ
supply for the Input/Output pins. An optional 12V
VPP power supply is provided to speed up custom-
er programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W640EC has an array of 135
blocks: 8 Parameter Blocks of 4 KWord and 127
Main Blocks of 32 KWord. M28W640ECT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W640ECB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Ad-
dresses.
The M28W640EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When VPP ≤ VPPLK all blocks are protected against
program or erase. All blocks are locked at Power
Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a 192 bit Protection Register
to increase the protection of a system design. The
Protection Register is divided into a 64 bit segment
and a 128 bit segment. The 64 bit segment con-
tains a unique device number written by ST, while
the second one is one-time-programmable by the
user. The user programmable segment can be
permanently protected. Figure 6, shows the Pro-
tection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
The memory is offered in TSOP48 (12 X 20mm)
and TFBGA48 (6.39 x 10.5mm, 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A21
Address Inputs
DQ0-DQ15
Data Input/Output
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
WP
Write Protect
VDD
Core Power Supply
VDDQ
Power Supply for
Input/Output
VPP
Optional Supply Voltage for
Fast Program & Erase
VSS
Ground
NC
Not Connected Internally
AI04378b
22
A0-A21
W
DQ0-DQ15
VDD
M28W640ECT
M28W640ECB
E
VSS
16
G
RP
WP
VDDQ VPP
相关PDF资料 |
PDF描述 |
|---|---|
| M28W640ECT85N1E | 4M X 16 FLASH 3V PROM, 85 ns, PDSO48 |
| M29W040B70N1E | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N1F | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N6E | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
| M29W040B70N6F | 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28W640ECT70ZB6 | 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W640ECT70ZB6T | 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W640FCB70N6 | 制造商:STMicroelectronics 功能描述: |
| M28W640FCB70N6E | 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28W640FCB70N6F | 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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