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参数资料
型号： M28W640ECT70ZB1E
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
封装： 6.39 X 10.50 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-48
文件页数： 5/54页
文件大小： 957K
代理商： M28W640ECT70ZB1E
13/54
M28W640ECT, M28W640ECB
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program, Double Word Program, Quadruple
Word Program, Block Lock, Block Lock-Down or
Protection Program commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protec-
tion Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to VIH. Program/Erase is aborted if
Reset turns to VIL.
See Appendix C, Figure 20, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
22, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 20, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
22, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to Program the 128 bit user One-Time-Pro-
grammable (OTP) segment of the Protection Reg-
ister. The segment is programmed 16 bits at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
Two write cycles are required to issue the Protec-
tion Register Program command.
■
The first bus cycle sets up the Protection
Register Program command.
■
The second latches the Address and the Data
to be written to the Protection Register and
starts the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The segment can be protected by programming bit
1 of the Protection Lock Register (see Figure 6,
Protection Register Memory Map). Attempting to
program a previously protected Protection Regis-
ter will result in a Status Register error. The pro-
tection of the Protection Register is not reversible.
The Protection Register Program cannot be sus-
pended.
Block Lock Command
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
■
The first bus cycle sets up the Block Lock
command.
■
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 10 shows the protection status after issuing
a Block Lock command.
The Block Lock bits are volatile, once set they re-
main set until a hardware reset or power-down/
power-up. They are cleared by a Blocks Unlock
command. Refer to the section, Block Locking, for
a detailed explanation.
Block Unlock Command
The Blocks Unlock command is used to unlock a
block, allowing the block to be programmed or
erased. Two Bus Write cycles are required to is-
sue the Blocks Unlock command.
■
The first bus cycle sets up the Block Unlock
command.
■
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 10 shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation.
Block Lock-Down Command
A locked block cannot be Programmed or Erased,
or have its protection status changed when WP is
low, VIL. When WP is high, VIH, the Lock-Down
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock com-
mand.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
■
The first bus cycle sets up the Block Lock
command.
■
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
相关PDF资料
PDF描述
M28W640ECT85N1E 4M X 16 FLASH 3V PROM, 85 ns, PDSO48
M29W040B70N1E 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
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相关代理商/技术参数
参数描述
M28W640ECT70ZB6 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W640ECT70ZB6T 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W640FCB70N6 制造商:STMicroelectronics 功能描述:
M28W640FCB70N6E 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W640FCB70N6F 功能描述:闪存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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