参数资料
型号: M295V040B-45K1TR
厂商: 意法半导体
英文描述: 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,统一座单电源闪存
文件页数: 13/21页
文件大小: 132K
代理商: M295V040B-45K1TR
13/21
M29F040B
Figure 7. Read Mode AC Waveforms
AI02903
tAVAV
tAVQV
tAXQX
tELQX
tEHQZ
tGLQV
tGLQX
tGHQX
VALID
A0-A18
G
DQ0-DQ7
E
tELQV
tEHQX
tGHQZ
VALID
Table 11. ReadAC Characteristics
(TA = 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M29F040B
Unit
45
55
70 / 90
t
AVAV
t
RC
Address Validto Next Address Valid
E = V
IL
,
G = V
IL
Min
45
55
70
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
Max
45
55
70
ns
t
ELQX(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
Min
0
0
0
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
G = V
IL
Max
45
55
70
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
Min
0
0
0
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
Max
25
30
30
ns
t
EHQZ(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
15
18
20
ns
t
GHQZ(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
Max
15
18
20
ns
t
EHQX
t
GHQX
t
AXQX
t
OH
Chip Enable, Output Enable or
Address Transition to Output
Transition
Min
0
0
0
ns
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