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参数资料
| 型号： | M295V200T-55M1R |
| 厂商： | 意法半导体 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 连接器附件 |
| 文件页数： | 1/33页 |
| 文件大小： | 224K |
| 代理商： | M295V200T-55M1R |
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AI01986
17
A0-A16
W
DQ0-DQ14
VCC
M29F200T
M29F200B
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Figure 1. LogicDiagram
M29F200T
M29F200B
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
5V
±
10% SUPPLYVOLTAGEfor PROGRAM,
ERASE and READOPERATIONS
FASTACCESS TIME: 55ns
FASTPROGRAMMING TIME
– 10
μ
s by Byte / 16
μ
s byWord typical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byteor Word-by-Word
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI-BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29F200T:00D3h
– Device Code, M29F200B:00D4h
DESCRIPTION
The M29F200 is a non-volatile memory that may
be erasedelectricallyat theblock or chipleveland
programmedin-systemona Byte-by-Byteor Word-
by-Word basis using only a single 5V V
CC
supply.
For Program and Erase operationsthe necessary
high voltages are generatedinternally. The device
can also be programmed in standard program-
mers.
The arraymatrix organisationallows each blockto
be erased and reprogrammed without affecting
otherblocks. Blocks can be protectedagainst pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application.
July 1998
1/33
44
1
SO44 (M)
TSOP48 (N)
12 x 20 mm
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相关代理商/技术参数 |
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|---|---|
| M295V200T-55M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M295V200T-55M3R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M295V200T-55M3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M295V200T-55M6R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M295V200T-55M6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
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