参数资料
型号: M295V200T-55M1R
厂商: 意法半导体
英文描述: CONNECTOR ACCESSORY
中文描述: 连接器附件
文件页数: 17/33页
文件大小: 224K
代理商: M295V200T-55M1R
Symbol
Alt
Parameter
M29F200T / M29F200B
Unit
-55
-70
High Speed
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
55
70
ns
t
ELWL
t
CS
Chip Enable Low to WriteEnable Low
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
30
35
ns
t
DVWH
t
DS
Input Valid to WriteEnable High
25
30
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
20
20
ns
t
AVWL
t
AS
Address Valid to Write EnableLow
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
45
45
ns
t
GHWL
Output Enable High to WriteEnable Low
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise Time to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
WHRL
(1)
t
BUSY
Program Erase Valid to RB Delay
30
30
ns
t
PHWL(1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotectionoperation.
Table15A. Write AC Characteristics,Write Enable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or–40 to 125
°
C)
POWER SUPPLY
PowerUp
ThememoryCommandInterfaceisreseton power
uptoReadArray.Either E or Wmust be tiedto V
IH
during Power Up to allow maximum security and
thepossibilityto writea commandonthefirstrising
edge of E and W. Any write cycle initiation is
blockedwhen Vcc is below V
LKO
.
SupplyRails
Normal precautions must be takenfor supplyvolt-
age decoupling; each device in a system should
havethe V
CC
raildecoupledwitha 0.1
μ
F capacitor
close to the V
CC
and V
SS
pins. The PCB trace
widths should be sufficient to carry the V
CC
pro-
gram and erasecurrents required.
17/33
M29F200T, M29F200B
相关PDF资料
PDF描述
M295V400T-55N6R 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M295V800AB90M1T Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35
M29DW128F60NF1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相关代理商/技术参数
参数描述
M295V200T-55M1TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M295V200T-55M3R 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M295V200T-55M3TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M295V200T-55M6R 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
M295V200T-55M6TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory