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参数资料
| 型号： | M295V200T-55M1R |
| 厂商： | 意法半导体 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 连接器附件 |
| 文件页数： | 15/33页 |
| 文件大小： | 224K |
| 代理商： | M295V200T-55M1R |
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Symbol
Alt
Parameter
Test Condition
M29F200T / M29F200B
Unit
-90
-120
Standard
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
, G = V
IL
90
120
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
90
120
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
G = V
IL
90
120
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
0
0
ns
t
GLQV(2)
t
OE
Output Enable Low to Output Valid
E = V
IL
35
50
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
20
30
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
E = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
20
30
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
t
PLYH(1,3)
t
RRB
t
READY
RP Low to Read Mode
10
10
μ
s
t
PHEL
t
RH
RP High to Chip Enable Low
50
50
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable to BYTE Switching Low
or High
5
5
ns
t
BLQZ
t
FLQZ
BYTE Switching Low to Output Hi-Z
20
30
ns
t
BHQV
t
FHQV
BYTE Switching High to Output Valid
40
40
ns
Notes:
1. Sampled only,not 100% tested.
2. G may be delayed by up to t
- t
afterthe falling edge of E withoutincreasing t
.
3. Tobe considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Table14B. Read AC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C or–40 to 125
°
C)
a blocknot beingerasedreturnsvalid data.During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. AProgram operation can be initiatedduring
erase suspend in one of the blocks not being
erased. Itwillresultin bothDQ2andDQ6toggling
whenthedatais beingprogrammed.ARead/Reset
command will definitively abort erasure and result
in invaliddata in the blocksbeing erased.
EraseResume(ER)Instruction.
IfanEraseSus-
pend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Coded cycles.
15/33
M29F200T, M29F200B
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| M295V200T-55M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
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| M295V200T-55M3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M295V200T-55M6R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M295V200T-55M6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
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