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参数资料
| 型号： | M295V200T-55M1R |
| 厂商： | 意法半导体 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 连接器附件 |
| 文件页数： | 14/33页 |
| 文件大小： | 224K |
| 代理商： | M295V200T-55M1R |
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Symbol
Alt
Parameter
Test Condition
M29F200T / M29F200B
Unit
-55
-70
High Speed
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
, G = V
IL
55
70
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
55
70
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
G = V
IL
55
70
ns
t
GLQX(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
0
0
ns
t
GLQV(2)
t
OE
Output Enable Low to Output Valid
E = V
IL
30
30
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
15
20
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
E = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
15
20
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
0
0
ns
t
PLYH(1,3)
t
RRB
t
READY
RP Low to Read Mode
10
10
μ
s
t
PHEL
t
RH
RP High to Chip Enable Low
50
50
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
ELBL
t
ELBH
t
ELFL
t
ELFH
Chip Enable to BYTE Switching Low
or High
5
5
ns
t
BLQZ
t
FLQZ
BYTE Switching Low to Output Hi-Z
15
20
ns
t
BHQV
t
FHQV
BYTE Switching High to Output Valid
30
30
ns
Notes:
1. Sampled only,not 100% tested.
2. G may be delayed by up to t
- t
afterthe falling edge of E withoutincreasing t
.
3. Tobe considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Table14A. Read AC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C or–40 to 125
°
C)
Erase Suspend (ES) Instruction.
The Block
Eraseoperationmay besuspendedbythisinstruc-
tion which consists of writing the command B0h
without anyspecificaddress.No Codedcyclesare
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhentheP/E.C.is suspended.TheToggle
bitswill stoptogglingbetween0.1
μ
sand15
μ
s after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 togglingand DQ6 at ’1’. A Read from
14/33
M29F200T, M29F200B
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| M295V200T-55M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
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| M295V200T-55M6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
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