参数资料
型号: M295V400T-55N6R
厂商: 意法半导体
英文描述: 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
中文描述: 4兆位512KB的x8或256Kb的x16插槽,启动座单电源闪存
文件页数: 1/34页
文件大小: 231K
代理商: M295V400T-55N6R
AI01726B
18
A0-A17
W
DQ0-DQ14
VCC
M29F400T
M29F400B
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Figure1. Logic Diagram
M29F400T
M29F400B
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Single Supply Flash Memory
NOT FOR NEW DESIGN
M29F400T and M29F400B are replaced
respectively by the M29F400BT and
M29F400BB
5V
±
10% SUPPLY VOLTAGE for PROGRAM,
ERASEand READOPERATIONS
FASTACCESSTIME: 55ns
FASTPROGRAMMING TIME
– 10
μ
s by Byte/ 16
μ
s by Word typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– ProgramByte-by-Byte or Word-by-Word
– StatusRegister bits and Ready/Busy Output
MEMORYBLOCKS
– Boot Block (Top or Bottom location)
– Parameterand Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI-BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
EraseSuspend
LOW POWER CONSUMPTION
– Stand-byand Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATARETENTION
– Defectivity below1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– DeviceCode, M29F400T: 00D5h
– DeviceCode, M29F400B: 00D6h
DESCRIPTION
The M29F400 is a non-volatile memory that may
be erasedelectrically at theblock or chip leveland
programmed in-systemonaByte-by-Byte orWord-
by-Word basis using only a single 5V V
CC
supply.
For Program and Erase operations the necessary
high voltages are generated internally. The device
can also be programmed in standard program-
mers.
The arraymatrix organisation allowseach blockto
be erased and reprogrammed without affecting
other blocks. Blocks canbe protectedagainst pro-
November 1999
1/34
This is information on a productstil l in production but not recommendedfornew designs.
44
1
SO44 (M)
TSOP48 (N)
12 x 20mm
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