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参数资料
| 型号： | M295V400T-55N6R |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的x8或256Kb的x16插槽，启动座单电源闪存 |
| 文件页数： | 18/34页 |
| 文件大小： | 231K |
| 代理商： | M295V400T-55N6R |
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Symbol
Alt
Parameter
M29F400T / M29F400B
Unit
-55
-70
High Speed
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next AddressValid
55
70
ns
t
ELWL
t
CS
Chip Enable Low toWrite Enable Low
0
0
ns
t
WLWH
t
WP
Write Enable Low to WriteEnable High
30
35
ns
t
DVWH
t
DS
Input Valid to Write Enable High
25
30
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write EnableLow
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
45
45
ns
t
GHWL
Output Enable High to Write Enable Low
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHGL
t
PHPHH(1,2)
t
OEH
Write Enable High to Output Enable Low
0
0
ns
t
VIDR
RP Rise Time to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
WHRL(1)
t
PHWL(1)
t
BUSY
Program Erase Valid to RB Delay
30
30
ns
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 15A. Write AC Characteristics, WriteEnable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Erase Suspend (ES) Instruction.
The Block
Eraseoperationmaybe suspended by thisinstruc-
tion which consists of writing the command B0h
withoutanyspecificaddress. No Codedcycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
togglingwhen theP/E.C.is suspended.TheToggle
bitswillstoptogglingbetween0.1
μ
sand15
μ
safter
the Erase Suspend (ES) command has beenwrit-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
18/34
M29F400T, M29F400B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M295V400T-55N6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M3R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M295V400T-70M3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
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