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参数资料
| 型号： | M295V040B-45K1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，统一座单电源闪存 |
| 文件页数： | 3/21页 |
| 文件大小： | 132K |
| 代理商： | M295V040B-45K1TR |
3/21
M29F040B
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process ofprogramming orerasing thememory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP32 (8 x 20mm),
PLCC32 and PDIP32 packages. Access times of
45ns, 55ns, 70ns and 90ns are available. The
memory is supplied with all the bits erased (set to
‘1’).
SIGNAL DESCRIPTIONS
See Figure 1, Logic Diagram, and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A18).
The Address Inputs
select thecells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Inputs/Outputs (DQ0-DQ7).
The Data In-
puts/Outputs output thedata stored at the selected
address during a Bus Read operation. During Bus
Write operations they represent the commands
sentto the Command Interfaceof theinternal state
machine.
Chip Enable (E).
The Chip Enable, E, activates
the memory, allowing Bus Read and Bus Write op-
erations to be performed. When Chip Enable is
High, V
IH
, all other pins are ignored.
Output Enable (G).
The Output Enable, G, con-
trols the Bus Read operation of the memory.
Write Enable (W).
The Write Enable, W, controls
the Bus Write operation of the memory’s Com-
mand Interface.
V
CC
Supply Voltage.
The V
CC
Supply Voltage
supplies the power for all operations (Read, Pro-
gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. Thisprevents Bus Write operationsfrom ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operationaborts and the memo-
ry contents being altered will be invalid.
A 0.1
μ
F capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widthsmust be sufficient to
carry the currents required during program and
erase operations, I
CC4
.
V
SS
Ground.
The V
SS
Ground is the reference for
all voltage measurements.
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions forextended periods may affect device reliability. Referalso to theSTMicroelectronics SURE Program and other relevantqual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°
C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°
C
Ambient Operating Temperature (Temperature Range Option 3)
–40 to 125
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
Storage Temperature
–65 to 150
°
C
V
IO(2)
Input or Output Voltage
–0.6 to 6
V
V
CC
Supply Voltage
–0.6 to 6
V
V
ID
Identification Voltage
–0.6 to 13.5
V
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| M295V040B-45K3R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
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| M295V040B-45K6R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M295V040B-45K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M295V040B-45N1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
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