参数资料
型号: M295V040B-45K1TR
厂商: 意法半导体
英文描述: 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,统一座单电源闪存
文件页数: 14/21页
文件大小: 132K
代理商: M295V040B-45K1TR
M29F040B
14/21
Figure 8. Write AC Waveforms, Write Enable Controlled
AI02908
E
G
W
A0-A18
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
Table 12. Write AC Characteristics, Write Enable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Symbol
Alt
Parameter
M29F040B
Unit
45
55
70 / 90
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
45
55
70
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
40
40
45
ns
t
DVWH
t
DS
Input Valid to Write Enable High
Min
25
25
30
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
20
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
Min
0
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
Min
40
40
45
ns
t
GHWL
Output Enable High to Write Enable Low
Min
0
0
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
Min
0
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
Min
50
50
50
μ
s
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