参数资料
型号: M295V040B-45K1TR
厂商: 意法半导体
英文描述: 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,统一座单电源闪存
文件页数: 5/21页
文件大小: 132K
代理商: M295V040B-45K1TR
5/21
M29F040B
Table 4. Bus Operations
Note: X = V
IL
or V
IH
.
Operation
E
G
W
Address Inputs
Data
Inputs/Outputs
Bus Read
V
IL
V
IL
V
IH
Cell Address
Data Output
Bus Write
V
IL
V
IH
V
IL
Command Address
Data Input
Output Disable
X
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Read Manufacturer
Code
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IL
, A9 = V
ID
,
Others V
IL
or V
IH
20h
Read Device Code
V
IL
V
IL
V
IH
A0 = V
IH
, A1 = V
IL
, A9 = V
ID
,
Others V
IL
or V
IH
E2h
Automatic Standby.
If CMOS levels (V
CC
±
0.2V)
are usedto drive the busand the busis inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to theCMOS Standby Supply Current, I
CC3
.
The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
ID
to be applied to some pins.
Electronic Signature.
The
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Table 4, Bus Operations.
Block Protection
and
BlocksUnprotection.
Each
block can be separately protected against acci-
dental Program or Erase. Protected blocks can be
unprotected to allow data to be changed. Block
Protection and Blocks Unprotection operations
must only be performed on programming equip-
ment. For further information refer to Application
Note AN1122, Applying Protection and Unprotec-
tion to M29 Series Flash.
memory
has
two
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