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参数资料
| 型号： | M295V040B-45K1TR |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，统一座单电源闪存 |
| 文件页数： | 8/21页 |
| 文件大小： | 132K |
| 代理商： | M295V040B-45K1TR |
M29F040B
8/21
Block Erase Command.
The Block Erase com-
mand can be used to erase a list of one or more
blocks. Six Bus Write operations are required to
select the first block in the list. Each additional
block in the list can be selected by repeating the
sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts
the Program/Erase Controller about 50
μ
s after the
last Bus Write operation. Oncethe Program/Erase
Controller starts it is not possible to select any
more blocks. Each additional block must therefore
be selected within 50
μ
s of the last block.The 50
μ
s
timer restarts when an additional block isselected.
The Status Register can be read after the sixth
Bus Write operation. See the Status Register for
details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
If any selected blocks are protected then these are
ignored and all the other selected blocks are
erased. If all of the selected blocks are protected
the Block Erase operation appears to start but will
terminate within about 100
μ
s, leaving the data un-
changed. Noerrorcondition is given when protect-
ed blocks are ignored.
During the Block Erase operation the memory will
ignore all commands except the Erase Suspend
and Read/Reset commands. Typical block erase
times are given in Table 6. All Bus Read opera-
tions during the Block Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After theBlock Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
The Block Erase Command sets all of the bits in
the unprotected selected blocks to ’1’. All previous
data in the selected blocks is lost.
Erase Suspend Command.
The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15
μ
s of the Erase Suspend Command being is-
sued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase willbe suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased willoutput the Status Register. It
is also possible toenter theAuto Select mode: the
memory will behaveas in the Auto Selectmode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. T
A
= 25
°
C, V
CC
= 5V.
Parameter
Min
Typ
(1)
Typical after
100k W/E Cycles
(1)
Max
Unit
Chip Erase (All bits in the memory set to ‘0’)
1.5
1.5
sec
Chip Erase
5
5
20
sec
Block Erase (64 Kbytes)
0.6
0.6
4
sec
Program
8
8
150
μ
s
Chip Program
4.5
4.5
18
sec
Program/Erase Cycles (per Block)
100,000
cycles
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相关代理商/技术参数 |
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| M295V040B-45K3R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M295V040B-45K3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M295V040B-45K6R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M295V040B-45K6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M295V040B-45N1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
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