参数资料
型号: M295V100B-T45N6T
厂商: 意法半导体
英文描述: 8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 16-TSSOP -25 to 85
中文描述: 1兆位的128KB x8或64Kb的x16插槽,启动座单电源闪存
文件页数: 15/22页
文件大小: 155K
代理商: M295V100B-T45N6T
15/22
M29F100BT, M29F100BB
Figure 9. Write AC Waveforms, Write Enable Controlled
AI01980B
E
G
W
A0-A15/
A–1
DQ0-DQ7/
DQ8-DQ15
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Table 15. Write AC Characteristics, Write Enable Controlled
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. Sampled only, not 100% tested.
Symbol
Alt
Parameter
M29F100B
Unit
45
70 / 90 / 120
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
45
70
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
40
45
ns
t
DVWH
t
DS
Input Valid to Write Enable High
Min
25
30
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
Min
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
Min
40
45
ns
t
GHWL
Output Enable High to Write Enable Low
Min
0
0
ns
t
WHGL
t
OEH
Write Enable High to Output Enable Low
Min
0
0
ns
t
WHRL(1)
t
BUSY
Program/Erase Valid to RB Low
Max
30
30
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
Min
50
50
μ
s
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