参数资料
型号: M295V100B-T45N6T
厂商: 意法半导体
英文描述: 8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 16-TSSOP -25 to 85
中文描述: 1兆位的128KB x8或64Kb的x16插槽,启动座单电源闪存
文件页数: 8/22页
文件大小: 155K
代理商: M295V100B-T45N6T
M29F100BT, M29F100BB
8/22
Program Command.
The
can be used to program a value to one address in
the memory array at a time. The command re-
quires fourBus Write operations, the final writeop-
eration latches theaddress and data intheinternal
state machine and starts the Program/Erase Con-
troller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is neverread and
no error condition is given.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given inTable 9. Bus Read op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. ARead/Reset command must be issued to re-
set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’. One of the Erase Com-
mands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
Unlock Bypass Command.
The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memo-
ry. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these com-
mands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be readas if in
Read mode.
Unlock Bypass Program Command.
The
lock Bypass Program command can be used to
program one address in memory at a time. The
Program
command
Un-
command requires two Bus Write operations, the
final write operation latches the address and data
in the internal state machine and starts the Pro-
gram/Erase Controller.
The Program operation using the Unlock Bypass
Program command behaves identically to the Pro-
gram operation using the Program command. A
protected block cannot be programmed; the oper-
ation cannot be aborted and theStatus Register is
read. Errors must be reset using the Read/Reset
command, which leaves the device in Unlock By-
pass Mode. See the Program command for details
on the behavior.
Unlock Bypass Reset Command.
The
Bypass Reset command can be used to return to
Read/Reset mode from Unlock Bypass Mode.
TwoBus Write operationsare required toissue the
Unlock Bypass Reset command.
Chip Erase Command.
The Chip Erase com-
mand canbeused to erase the entirechip. SixBus
Write operations are required to issue the Chip
Erase Command and start the Program/Erase
Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation ap-
pears tostart but willterminate within about 100
μ
s,
leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the erase operation the memory will ignore
all commands. It is not possible to issue any com-
mand to abort the operation. Typical chip erase
times are given in Table 9. All Bus Read opera-
tions during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read Mode.
TheChip Erase Command sets allof the bits inun-
protected blocks of the memory to ’1’. All previous
data is lost.
Unlock
相关PDF资料
PDF描述
M295V200T-55M1R CONNECTOR ACCESSORY
M295V400T-55N6R 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M295V800AB90M1T Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35
M29DW128F60NF1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相关代理商/技术参数
参数描述
M295V100B-T70M1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100B-T70M3T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100B-T70M6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100B-T70N1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
M295V100B-T70N3T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory