参数资料
型号: M5M5Y5672TG-20
厂商: Mitsubishi Electric Corporation
英文描述: 18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
中文描述: 18874368位(262144 - Word的72位)网络的SRAM
文件页数: 14/27页
文件大小: 240K
代理商: M5M5Y5672TG-20
MITSUBISHI LSIs
M5M5Y5672TG – 25,22,20
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
14
MITSUBISHI
ELECTRIC
Advanced Information
M5M5Y5672TG REV.0.1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
DDQ
V
I
V
O
PD
T
OPR
T
STG(bias)
T
STG
Note24. * This is -1.0V~3.6V when pulse width
2ns, and -0.5V~2.5V in case of DC.
** This is -1.0V~V
DDQ
+1.0V(
3.6V max.) when pulse width
2ns, and –0.5V~V
DDQ
+0.5V in case of DC.
Parameter
Conditions
Ratings
-0.5*~2.5
-0.5*~2.5
Unit
V
V
V
V
mW
°C
°C
°C
Power Supply Voltage
I/O Buffer Power Supply Voltage
Input Voltage
Output Voltage
Maximum Power Dissipation (V
DD
)
Operating Temperature
Storage Temperature(bias)
Storage Temperature
-0.5~V
DDQ
+0.5(
2.5V max.) **
-0.5~V
DDQ
+0.5(
2.5V max.) **
1072.5
0~70
-10~85
-65~150
With respect to V
SS
DC ELECTRICAL CHARACTERISTICS
(1) Power Supplies
Limits
Symbol
Parameter
Condition
Min
1.70
1.70
Max
1.95
1.95
Unit
V
DD
V
DDQ
Power Supply Voltage
I/O Buffer Power Supply Voltage
V
V
(2) CMOS I/O DC Input Characteristics
Limits
Symbol
Parameter
Condition
Min
Max
Unit
V
IH
V
IL
Note25. *V
IL
min is –1.0V and V
IH
max is V
DDQ
+1.0V(max. 3.6V) in case of AC (Pulse width
2ns).
(3) Input and Output Leakage Characteristics
High-level Input Voltage
Low-level Input Voltage
0.65*V
DDQ
-0.3*
V
DDQ
+0.3
0.35*V
DDQ
V
V
Limits
Symbol
Parameter
Condition
Min
Max
Unit
Input Leakage Current
(except EP2, EP3, LBO#, ZQ, MCH, MCL pins)
V
I
= 0V~V
DDQ
10
μA
I
IL
Input Leakage Current of
EP2, EP3, LBO#, ZQ, MCH, MCL pins
V
I
= 0V~V
DDQ
10
μA
I
OL
Output Leakage Current
V
I/O
= 0V~V
DDQ
10
μA
(4) Selectable Impedance Output Driver DC Electrical Characteristics
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