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参数资料
| 型号： | MAX17019ATM+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 5/25页 |
| 文件大小： | 0K |
| 描述： | IC VOLT CTRL QUAD OUT 48-TQFN-EP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 嵌入式系统，控制台/机顶盒 |
| 电源电压： | 5.5 V ~ 38 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-WFQFN 裸露焊盘 |
| 供应商设备封装： | 48-TQFN-EP（6x6） |
| 包装： | 带卷 (TR) |
High-Input-Voltage Quad-Output Controller
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V INLDO = 12V, V INA = V INBC = V DD = V CC = V BYP = V CSPA = V CSNA = 5V, V IND = 1.8V, V SHDN = V ONA = V ONB =
V ONC = V OND = 5V, I REF = I LDO5 = I OUTD = no load, FREQ = GND, UP /DN = V CC , T A = 0°C to +85°C , unless otherwise noted.
Typical values are at T A = +25°C.) (Note 1)
PARAMETER
FBD Output Accuracy
FBD Load Regulation
SYMBOL
V FBD
CONDITIONS
V FBD with respect to V REFIND , OUTD =
FBD, I OUTD = +50 μA (source load)
V FBD with respect to V REFIND ,
OUTD = FBD, I OUTD = -50 μA (sink load)
I OUTD = ±1A
MIN
-10
0
-17
TYP
-13
MAX
0
+10
UNITS
mV
mV/A
FBD Line Regulation
V IND = 1.0V to 2.8V, I OUTD = ±200mA
1
mV
FBD Input Current
OUTD Linear-Regulator Current
Limit
Current-Limit Soft-Start Time
Internal MOSFET On-Resistance
V FBD = 0 to 1.5V, T A = +25°C
Source load
Sink load
With respect to internal OND signal
High-side on-resistance
Low-side on-resistance
+2
-2
0.1
160
120
180
0.5
+4
-4
250
450
μA
A
μs
m
VTTR Output Accuracy
REFIND to VTTR
I VTTR = ±0.5mA
I VTTR = ±3mA
-10
-20
+10
+20
mV
VTTR Maximum Current Rating
FAULT PROTECTION
±5
mA
SMPS POK and Fault Thresholds
VTT LDO POKD and Fault
Threshold
Upper threshold rising edge,
hysteresis = 50mV
Lower threshold falling edge,
hysteresis = 50mV
Upper threshold rising edge,
hysteresis = 50mV
Lower threshold falling edge,
hysteresis = 50mV
9
-14
6
-16
12
-12
12
-12
14
-9
16
-6
%
%
POK Propagation Delay
Overvoltage Fault Latch Delay
SMPS Undervoltage Fault
Latch Delay
VTT LDO Undervoltage Fault
Latch Delay
POK Output Low Voltage
t POK
t OVP
t UVP
t UVP
V POK
FB_ forced 50mV beyond POK_ trip
threshold
FB_ forced 50mV above POK_ upper
trip threshold
FBA, FBB, or FBC forced 50mV below
POK_ lower trip threshold
FBD forced 50mV below POKD lower
trip threshold
I SINK = 3mA
5
5
5
5000
0.4
μs
μs
μs
μs
V
V FBA = 1.05V, V FBB = V FBC = 0.8V, V FBD =
POK Leakage Currents
I POK
V REFIND + 50mV (POK high impedance);
1
μA
POK_ forced to 5V, T A = +25°C
Thermal-Shutdown Threshold
T SHDN
Hysteresis = 15°C
+160
°C
_______________________________________________________________________________________
5
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