参数资料
型号: MC7455ARX867LG
厂商: MOTOROLA INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, 867 MHz, RISC PROCESSOR, CBGA483
封装: 29 X 29 MM, 1.27 MM PITCH, CERAMIC, BGA-483
文件页数: 55/76页
文件大小: 1520K
代理商: MC7455ARX867LG
MOTOROLA
MPC7455 RISC Microprocessor Hardware Specifications
59
System Design Information
affect the final operating die-junction temperature—airflow, board population (local heat flux of adjacent
components), heat sink efficiency, heat sink attach, heat sink placement, next-level interconnect technology,
system air temperature rise, altitude, etc.
Due to the complexity and the many variations of system-level boundary conditions for today's
microelectronic equipment, the combined effects of the heat transfer mechanisms (radiation, convection,
and conduction) may vary widely. For these reasons, we recommend using conjugate heat transfer models
for the board, as well as system-level designs.
For system thermal modeling, the MPC7445 and MPC7455 thermal model is shown in Figure 28. Four
volumes will be used to represent this device. Two of the volumes, solder ball, and air and substrate, are
modeled using the package outline size of the package. The other two, die, and bump and underfill, have the
same size as the die. Dimensions for these volumes for the MPC7445 and MPC7455 are given in Figure 20
and Figure 21, respectively. The silicon die should be modeled 9.10
× 12.25 × 0.74 mm with the heat source
applied as a uniform source at the bottom of the volume. The bump and underfill layer is modeled as 9.10
×
12.25
× 0.069 mm (or as a collapsed volume) with orthotropic material properties: 0.6 W/(m K) in the
xy-plane and 2 W/(m K) in the direction of the z-axis. The substrate volume is 25
× 25 × 1.2 mm
(MPC7445) or 29
× 29 × 1.2 mm (MPC7455), and this volume has 18 W/(m K) isotropic conductivity.
The solder ball and air layer is modeled with the same horizontal dimensions as the substrate and is 0.9 mm
thick. It can also be modeled as a collapsed volume using orthotropic material properties: 0.034 W/(m K)
in the xy-plane direction and 3.8 W/(m K) in the direction of the z-axis.
Figure 30. Recommended Thermal Model of MPC7445 and MPC7455
Bump and Underfill
Die
Substrate
Solder and Air
Die
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity
Value
Unit
Bump and Underfill
kx
0.6
W/(m K)
ky
0.6
kz
2
Substrate
k18
Solder Ball and Air
kx
0.034
ky
0.034
kz
3.8
相关PDF资料
PDF描述
MC7445ARX733LG 32-BIT, 733 MHz, RISC PROCESSOR, CBGA360
MC7445ARX1000LG 32-BIT, 1000 MHz, RISC PROCESSOR, CBGA360
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MC7455ARX1000LG 32-BIT, 1000 MHz, RISC PROCESSOR, CBGA483
MC7455ARX933LG 32-BIT, 933 MHz, RISC PROCESSOR, CBGA483
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