收藏本站
参数资料
型号： MCZ33905S5EK
厂商： Freescale Semiconductor
文件页数： 26/106页
文件大小： 0K
描述： IC SYSTEM BASIS CHIP GEN2 32SOIC
标准包装： 42
应用： 系统基础芯片
接口： CAN，LIN
电源电压： 5.5 V ~ 27 V
封装/外壳： 32-BSOP（0.295"，7.50mm 宽）裸露焊盘
供应商设备封装： 32-SOICW 裸露焊盘
包装： 管件
安装类型： 表面贴装
Analog Integrated Circuit Device Data
26
Freescale Semiconductor
33903/4/5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
SPLIT
Output voltage
Loaded condition ISPLIT = ±500 A
Unloaded condition Rmeasure > 1.0 M
VSPLIT
0.3 x VDD
0.45 x
VDD
0.5 x VDD
0.7 x VDD
0.55 x VDD
V
Leakage current
-12 V < VSPLIT < +12 V
-22 to -12 V < VSPLIT < +12 to +35 V
ILSPLIT
-
0.0
-
5.0
200
A
LIN TERMINALS (LIN-T/1, LIN-T2)
LIN-T1, LIN-T2, HS switch drop @ I = -20 mA, VSUP > 10.5 V
VLT_HSDRP
-
1.0
1.4
V
LIN1 & LIN2 33903D/5D PIN - LIN 33903S/5S PIN (Parameters guaranteed for VSUP/1, VSUP2 7.0 V VSUP 18 V)
Operating Voltage Range
VBAT
8.0
-
18
V
Supply Voltage Range
VSUP
7.0
-
18
V
Current Limitation for Driver Dominant State
Driver ON, VBUS = 18 V
IBUS_LIM
40
90
200
mA
Input Leakage Current at the receiver
Driver off; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_DOM
-1.0
-
mA
Leakage Output Current to GND
Driver Off; 8.0 V
VBAT 18 V; 8.0 V VBUS 18 V; VBUS VBAT
IBUS_PAS_REC
-
20
A
Control unit disconnected from ground (Loss of local ground must not affect
communication in the residual network)
GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V (Guaranteed by design)
IBUS_NO_GND
-1.0
-
1.0
mA
VBAT Disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18 V (Node has to
sustain the current that can flow under this condition. Bus must remain
operational under this condition). (Guaranteed by design)
IBUSNO_BAT
-
100
A
Receiver Dominant State
VBUSDOM
-
0.4
VSUP
Receiver Recessive State
VBUSREC
0.6
-
VSUP
Receiver Threshold Center
(VTH_DOM + VTH_REC)/2
VBUS_CNT
0.475
0.5
0.525
VSUP
Receiver Threshold Hysteresis
(VTH_REC - VTH_DOM)
VHYS
-
0.175
VSUP
LIN Wake-up threshold from LP VDD ON or LP VDD OFF mode
VBUSWU
-
5.3
5.8
V
LIN Pull-up Resistor to VSUP
RSLAVE
20
30
60
k
Overtemperature Shutdown (Guaranteed by design)
TLINSD
140
160
180
°C
Overtemperature Shutdown Hysteresis (Guaranteed by design)
TLINSD_HYS
-
10
-
°C
Table 6. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V
VSUP 28 V, -40 C TA 125 C, unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
相关PDF资料
PDF描述
V150C36H150BL2 CONVERTER MOD DC/DC 36V 150W
C8051F985-GM IC MCU 8BIT 2KB FLASH 20QFN
901-9610-3SF CONN SMA BULKHEAD JACK CRIMP
V150C36H150BF3 CONVERTER MOD DC/DC 36V 150W
V24A28E500BF3 CONVERTER MOD DC/DC 28V 500W
相关代理商/技术参数
参数描述
MCZ33905S5EK/R2 制造商:Freescale Semiconductor 功能描述:IC SBC GEN2 CAN LIN X1 32SOIC 制造商:Freescale Semiconductor 功能描述:IC, SBC, GEN2, CAN, LIN X1, 32SOIC
MCZ33905S5EKR2 功能描述:CAN 接口集成电路 5V SBC HSCAN SNGL LIN RoHS:否 制造商:Texas Instruments 类型:Transceivers 工作电源电压:5 V 电源电流: 工作温度范围:- 40 C to + 85 C 封装 / 箱体:SOIC-8 封装:Tube
MCZ33905S5R2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:SBC Gen2 with CAN High Speed and LIN Interface
MCZ33927EK 功能描述:功率驱动器IC THREE PHASE PRE- DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCZ33927EK/R2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Three-Phase Field Effect Transistor Pre-Driver
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*