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| 型号： | MRF1518NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 721K |
| 描述： | MOSFET RF N-CH PLD-1.5 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 520MHz |
| 增益： | 13dB |
| 电压 - 测试： | 12.5V |
| 额定电流： | 4A |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 8W |
| 电压 - 额定： | 40V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF1518NT1DKR |
18
RF Device Data
Freescale Semiconductor
MRF1518NT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN211A: Field Effect Transistors in Theory and Practice
?
AN215A: RF Small-Signal Design Using Two-Port Parameters
?
AN721: Impedance Matching Networks Applied to RF Power Transistors
?
AN4005: Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
10
June 2008
?
Changed Power Gain from 13.5 dB to 13 dB in Functional Tests table on p. 2 and corrected specified
performance values for power gain and efficiency on p. 1 to match typical performance values in the
functional test. Past two years of production data shows Power Gain typical value at 13 dB.
?
Added Product Documentation and Revision History, p. 18
11
June 2009
?
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
?
Added Electromigration MTTF Calculator availability to Product Documentation, Tools and Software, p. 18
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1535NT1 | IC MOSFET RF N-CHAN TO272-6 WRAP |
| MRF1550FNT1 | IC MOSFET RF N-CHAN TO272-6 |
| MRF1570NT1 | IC MOSFET RF N-CHAN TO272-8 WRAP |
| MRF18030ALSR3 | IC MOSFET RF N-CHAN NI-400S |
| MRF18060ALR3 | IC MOSFET RF N-CHAN NI-780 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1518NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR |
| MRF151A | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 50Volt Gain 14dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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