参数资料
型号: MRF1518NT1
厂商: Freescale Semiconductor
文件页数: 5/19页
文件大小: 721K
描述: MOSFET RF N-CH PLD-1.5
产品培训模块: RF Broadcast Solutions
标准包装: 1
晶体管类型: LDMOS
频率: 520MHz
增益: 13dB
电压 - 测试: 12.5V
额定电流: 4A
电流 - 测试: 150mA
功率 - 输出: 8W
电压 - 额定: 40V
封装/外壳: PLD-1.5
供应商设备封装: PLD-1.5
包装: 标准包装
产品目录页面: 560 (CN2011-ZH PDF)
其它名称: MRF1518NT1DKR
MRF1518NT1
13
RF Device Data
Freescale Semiconductor
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 43 pF capacitor in
series with gate. (See Figure 28).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD
> 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 38. Series Equivalent Input and Output Impedance (continued)
Zo
= 10
Ω
Zin
= Complex conjugate of source
impedance with parallel 15 Ω
resistor and 47 pF capacitor in
series with gate. (See Figure 19).
ZOL* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD
> 50 %.
f
MHz
Zin
Ω
ZOL*
Ω
400 4.28 +j2.36 4.41 +j0.67
VDD
= 12.5 V, I
DQ
= 150 mA, P
out
= 8 W
440 6.45 +j5.13 4.14 +j2.53
470 5.91 +j3.34 3.92 +j4.02
f
MHz
Zin
Ω
ZOL*
Ω
135 18.31 -j0.76 8.97 +j2.62
VDD
= 12.5 V, I
DQ
= 150 mA, P
out
= 8 W
155 17.72 +j1.85 9.69 +j2.81
175 18.06 +j5.23 7.94 +j1.14
f = 135 MHz
175
Zin
ZOL*
135
f = 175 MHz
f = 470 MHz
Zin
400
ZOL*
400
f = 470 MHz
Zin
ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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