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| 型号： | MRF1518NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/19页 |
| 文件大小： | 721K |
| 描述： | MOSFET RF N-CH PLD-1.5 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 520MHz |
| 增益： | 13dB |
| 电压 - 测试： | 12.5V |
| 额定电流： | 4A |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 8W |
| 电压 - 额定： | 40V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF1518NT1DKR |
16
RF Device Data
Freescale Semiconductor
MRF1518NT1
MOUNTING
The specified maximum thermal resistance of 2°C/W as-
sumes a majority of the 0.065″
x 0.180
″
source contact on
the back side of the package is in good contact with an ap-
propriate heat sink. As with all RF power devices, the goal of
the thermal design should be to minimize the temperature at
the back side of the package. Refer to Freescale Application
Note AN4005/D, ?Thermal Management and Mounting Meth-
od for the PLD-1.5 RF Power Surface Mount Package,? and
Engineering Bulletin EB209/D, ?Mounting Method for RF
Power Leadless Surface Mount Transistor? for additional in-
formation.
AMPLIFIER DESIGN
Impedance matching networks similar to those used with
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, ?Impedance
Matching Networks Applied to RF Power Transistors.?
Large-signal impedances are provided, and will yield a good
first pass approximation.
Since RF power MOSFETs are triode devices, they are not
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region.
Two-port stability analysis with this device?s
S-parameters provides a useful tool for selection of loading
or feedback circuitry to assure stable operation. See Free-
scale Application Note AN215A, ?RF Small-Signal Design
Using Two-Port Parameters? for a discussion of two port
network theory and stability.
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| MRF1570NT1 | IC MOSFET RF N-CHAN TO272-8 WRAP |
| MRF18030ALSR3 | IC MOSFET RF N-CHAN NI-400S |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1518NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1518T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR |
| MRF151A | 功能描述:射频MOSFET电源晶体管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF151G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 50Volt Gain 14dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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