参数资料
型号: MRF1518NT1
厂商: Freescale Semiconductor
文件页数: 14/19页
文件大小: 721K
描述: MOSFET RF N-CH PLD-1.5
产品培训模块: RF Broadcast Solutions
标准包装: 1
晶体管类型: LDMOS
频率: 520MHz
增益: 13dB
电压 - 测试: 12.5V
额定电流: 4A
电流 - 测试: 150mA
功率 - 输出: 8W
电压 - 额定: 40V
封装/外壳: PLD-1.5
供应商设备封装: PLD-1.5
包装: 标准包装
产品目录页面: 560 (CN2011-ZH PDF)
其它名称: MRF1518NT1DKR
4
RF Device Data
Freescale Semiconductor
MRF1518NT1
TYPICAL CHARACTERISTICS, 450 - 520 MHz
0121
2
3
4675891011
Pout, OUTPUT POWER (WATTS)
50
10
80
Eff, DRAIN EFFICIENCY (%)
30
60
40
500 MHz
520 MHz
450 MHz
470 MHz
Eff, DRAIN EFFICIENCY (%)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
7
5
13
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
0
Figure 6. Output Power versus Biasing Current
12
IDQ, BIASING CURRENT (mA)
0
Figure 7. Drain Efficiency versus
Biasing Current
70
IDQ, BIASING CURRENT (mA)
45
Figure 8. Output Power versus Supply Voltage
2
8
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
30
9151610
12 13
14
8
91011 1613 14
15
12
11
0
40
60
450 MHz
60
30
400
0
7
12
600 1000800
80
2
4
8
9
17
200
50
5891011
11
P
out
, OUTPUT POWER (WATTS)
200 1000400 600
800
P
out
, OUTPUT POWER (WATTS)
3
1
65
470 MHz
55
3
4
6
5
Eff, DRAIN EFFICIENCY (%)
50
70
35
500 MHz
520 MHz
470 MHz
450 MHz
6
500 MHz
520 MHz
10
470 MHz
450 MHz
500 MHz
520 MHz
500 MHz
520 MHz
470 MHz
450 MHz
500 MHz
520 MHz
470 MHz
450 MHz
VDD
= 12.5 Vdc
Pin
= 26.2 dBm
IDQ
= 150 mA
Pin
= 26.2 dBm
VDD
= 12.5 Vdc
Pin
= 26.2 dBm
IDQ
= 150 mA
Pin
= 26.2 dBm
VDD
= 12.5 Vdc
467
15
0
20
70
VDD
= 12.5 Vdc
40
35
11
8
10
9
45
55
65
75
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