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| 型号： | MRF6VP2600HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 1438K |
| 描述： | MOSFET RF N-CH 600W NI1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 225MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 2.6A |
| 功率 - 输出： | 125W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRF6VP2600HR6DKR |
18
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2008
?
Initial Release of Data Sheet
1
July 2008
?
Removed Capable of Handling 5:1 VSWR bullet, p. 1
?
Corrected Zsource
and Zload
values from 1.58 + j6.47 to 1.42 + j8.09 and 4.60 + j1.85 to 4.45 + j1.16 and re-
plotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9
2
Sept. 2008
?
Added Note to Fig. 4, Capacitance versus Drain--Source Voltage and Fig. 5, DC Safe Operating Area to de-
note that each side of device is measured separately, p. 5
?
Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5
?
Figs. 21 and 27, Series Equivalent
Source and Load Impedance, corrected Zsource
copy to read ?Test circuit
impedance as measured from gate to gate, balanced configuration? and Zload
copy to read ?Test circuit
impedance as measured from gate to gate,
balanced configuration?, p. 9, 14
2.1
Nov. 2008
?
Corrected Figs. 21 and 27 Revision History Zload
copy to read ?Test circuit impedance as measured from
drain to drain, balanced configuration?, p. 9, 14
4
May 2009
?
Updated bullets in Features section to reflect consistent listing
across products, p. 1
?
Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1
?
Added Typical Performances table for 352.2 MHz application, p. 2
?
Added Fig. 28, Test Circuit Component Layout -- 352.2 MHz
and Table 7, Test Circuit Component Designations
and Values -- 352.2 MHz, p. 15
?
Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power -- 352.2 MHz p. 16
?
Added Fig. 30, Series Equivalent Source and Load Impedance -- 352.2 MHz, p. 17
4.1
June 2009
?
Changed ?EKME630ELL471MK25S? part number to ?MCGPR63V477M13X26--RH?, Table 5, Test Circuit
Component Designations and Values and Table 6, Test Circuit Component Designations and Values ?
88--108 MHz, p. 3, 11
?
Added Electromigration MTTF Calculator and RF High
Power Model availability to Product Documentation,
Tools and Software, p. 20
5
May 2010
?
Changed 10--500 MHz to 2--500 MHz in Device Description box, p. 1
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
?Continuous use at maximum temperature will affect MTTF? footnote added, p. 1
?
Added thermal data for 88--108 MHz application to Thermal Characteristics table, p. 1
?
Added Typical Performance table for 88--108 MHz application, p. 2
?
Removed Fig. 20, MTTF versus Junction Temperature -- Pulsed and renumbered accordingly, p. 8
?
Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values,
the Typical Characteristic curves and Fig. 27 Series Impedance for 88--108 MHz with improved circuit
performance figures. The 88--108 MHz application circuit is also now a more compact size., p. 10--12
5.1
July 2010
?
Fig. 24, Series Impedance for 88--108 MHz, table and
plot updated to reflect correct location of Zsource
and
Zload,p.12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP2600HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP3091N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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