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| 型号： | MRF6VP2600HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/19页 |
| 文件大小： | 1438K |
| 描述： | MOSFET RF N-CH 600W NI1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 225MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 2.6A |
| 功率 - 输出： | 125W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRF6VP2600HR6DKR |
2
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(ID
= 150 mA, VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
2.5
mA
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 800
μAdc)
VGS(th)
1
1.65
3
Vdc
Gate Quiescent Voltage
(2)
(VDD
=50Vdc,ID
= 2600 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.7
3.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
?
0.25
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.7
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
101
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
287
?
pF
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 2600 mA, Pout
= 125 W Avg., f = 225 MHz, DVB--T
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4MHzOffset.
Power Gain
Gps
24
25
27
dB
Drain Efficiency
ηD
27
28.5
?
%
Adjacent Channel Power Ratio
ACPR
?
-- 6 1
-- 5 9
dBc
Input Return Loss
IRL
?
-- 1 8
-- 9
dB
Typical Performance ? 352.2 MHz
(In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 600 W CW
Power Gain
Gps
?
22
?
dB
Drain Efficiency
ηD
?
68
?
%
Input Return Loss
IRL
?
-- 1 5
?
dB
Typical Performance ? 88--108 MHz
(In Freescale 88--108 MHz Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 600 W
CW
Power Gain
Gps
?
24.5
?
dB
Drain Efficiency
ηD
?
74
?
%
Input Return Loss
IRL
?
-- 5
?
dB
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP2600HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP3091N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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