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参数资料
| 型号： | MRF6VP2600HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 15/19页 |
| 文件大小： | 1438K |
| 描述： | MOSFET RF N-CH 600W NI1230 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 225MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 2.6A |
| 功率 - 输出： | 125W |
| 电压 - 额定： | 110V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRF6VP2600HR6DKR |
MRF6VP2600HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
Gps
VDD
=50Vdc,IDQ
= 2600 mA
f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
50
1
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
10
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
1
100
110100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
26.5
10
0
80
100
25.5
24.5
23.5
70
60
50
40
30
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
25
24
22.5
1000
20
52
64
27
62
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
60
38
26
58
31 32 33 34 35 36 37
P
out
, OUTPUT POWER (dBm)
P3dB = 59.7 dBm (938 W)
Actual
Ideal
P2dB = 59.1 dBm (827 W)
21
26
0
25
24
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
100
23
600 700
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
21
28
10
25
27
26
100 1000
VDD
=50Vdc,IDQ
= 2600 mA, f = 225 MHz
Pulse Width = 12
μsec, Duty Cycle = 1%
VDD
=50Vdc
IDQ
= 2600 mA
f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
56
54
29 30
28
P1dB = 53.3 dBm (670 W)
22
200 300 400 500
VDD
=30V
35 V
40 V
45 V
50 V
ηD
25_C
TC
=--30_C
85_C
Gps
22
24
23
VDD
=50Vdc,IDQ
= 2600 mA
f = 225 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
TC
=25_C
TJ= 150_C
TJ
= 175_C
10
80
50
70
60
20
40
30
η
D
,
DRAIN EFFICIENCY (%)
23
10
Note:
Each side of device measured separately.
Note:
Each side of device measured separately.
TJ
= 200_C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6VP2600HR6_10 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET |
| MRF6VP3091N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs |
| MRF6VP3091NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6VP3091NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 50V 4.5W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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