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参数资料
| 型号： | MT18LSDT1672AY-13EXX |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | LEAD FREE, MO-161, DIMM-168 |
| 文件页数： | 13/25页 |
| 文件大小： | 553K |
| 代理商： | MT18LSDT1672AY-13EXX |
64MB x72, ECC, SR), 128MB (x72, ECC, DR)
168-PIN SDRAM UDIMM
09005aef807b3709
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD9_18C8_16x72AG.fm - Rev. E 6/04 EN
20
2004 Micron Technology, Inc.
Figure 10: SPD EEPROM Timing Diagram
Table 18:
EEPROM Device Select Code
The most significant bit (b7) is sent first
SELECT CODE
DEVICE TYPE IDENTIFIER
CHIP ENABLE
RW
b7
b6
b5
b4
b3
b2
b1
b0
Memory Area Select Code (two arrays)
10
SA2
SA1
SA0
RW
Protection Register Select Code
01
10
SA2
SA1
SA0
RW
Table 19:
EEPROM Operating Modes
MODE
RW BIT
WC
BYTES
INITIAL SEQUENCE
Current Address Read
1
VIH or VIL
1
Start, Device Select, RW = 1
RandomAddressRead
0
VIH or VIL
1
Start, Device Select, RW= 0, Address
1
VIH or VIL
RESTART, Device Select, RW= 1
Sequential Read
1
VIH or VIL
≥ 1
Similar to Current or Random Address Read
Byte Write
0VIL
1
START, Device Select, RW = 0
Page Write
0VIL
≤ 16
START, Device Select, RW = 0
SCL
SDA IN
SDA OUT
tLOW
tSU:STA
tHD:STA
tF
tHIGH
tR
tBUF
tDH
tAA
tSU:STO
tSU:DAT
tHD:DAT
UNDEFINED
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT18LSDT1672G-10EC2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT1672G-133C2 | 制造商:Micron Technology Inc 功能描述:16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| MT18LSDT1672G-13EG3 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT3272 | 制造商:Micron Technology Inc 功能描述:256MB 32MX72 SDRAM MODULE DIMM 3.3V REGISTERED - Trays |
| MT18LSDT3272AG-10EB1 | 制造商:Micron Technology Inc 功能描述: |
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