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参数资料
| 型号： | MT18LSDT1672AY-13EXX |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | LEAD FREE, MO-161, DIMM-168 |
| 文件页数： | 9/25页 |
| 文件大小： | 553K |
| 代理商： | MT18LSDT1672AY-13EXX |
64MB x72, ECC, SR), 128MB (x72, ECC, DR)
168-PIN SDRAM UDIMM
09005aef807b3709
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD9_18C8_16x72AG.fm - Rev. E 6/04 EN
17
2004 Micron Technology, Inc.
Table 17:
AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11, 32; notes appear on page 18
PARAMETER
SYMBOL
-13E
-133
-10E
UNITS
NOTES
READ/WRITE command to READ/WRITE command
tCCD
11
1
tCK
CKE to clock disable or power-down entry mode
tCKED
11
1
tCK
CKE to clock enable or power-down exit setup mode
tPED
11
1
tCK
DQM to input data delay
tDQD
00
0
tCK
DQM to data mask during WRITEs
tDQM
00
0
tCK
DQM to data high-impedance during READs
tDQZ
22
2
tCK
WRITE command to input data delay
tDWD
00
0
tCK
Data-in to ACTIVE command
tDAL
45
4
tCK
Data-in to PRECHARGE command
tDPL
22
2
tCK
Last data-in to burst STOP command
tBDL
11
1
tCK
Last data-in to new READ/WRITE command
tCDL
11
1
tCK
Last data-in to PRECHARGE command
tRDL
22
2
tCK
LOAD MODE REGISTER command to ACTIVE or REFRESH command
tMRD
22
2
tCK
Data-out to high-impedance from PRECHARGE
command
CL = 3
tROH(3)
33
3
tCK
CL = 2
tROH(2)
22
2
tCK
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相关代理商/技术参数 |
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|---|---|
| MT18LSDT1672G-10EC2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT1672G-133C2 | 制造商:Micron Technology Inc 功能描述:16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| MT18LSDT1672G-13EG3 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT3272 | 制造商:Micron Technology Inc 功能描述:256MB 32MX72 SDRAM MODULE DIMM 3.3V REGISTERED - Trays |
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