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参数资料
| 型号： | MT18LSDT1672AY-13EXX |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | LEAD FREE, MO-161, DIMM-168 |
| 文件页数： | 15/25页 |
| 文件大小： | 553K |
| 代理商： | MT18LSDT1672AY-13EXX |
64MB x72, ECC, SR), 128MB (x72, ECC, DR)
168-PIN SDRAM UDIMM
09005aef807b3709
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD9_18C8_16x72AG.fm - Rev. E 6/04 EN
22
2004 Micron Technology, Inc.
Table 22:
Serial Presence-Detect Matrix
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; VDD = +3.3V ±0.3V
BYTE
DESCRIPTION
ENTRY
(VERSION)
MT9LSDT872A
MT18LSDT1672A
0
Number of Bytes Used by Micron
128
80
1
Total Number of SPD Memory Bytes
256
08
2
Memory Type
SDRAM
04
3
Number of Row Addresses
12
0C
4
Number of Column Addresses
909
09
5
Number of Module Ranks
1 or 2
01
02
6
Module Data Width
72
48
7
Module Data Width (Continued)
000
00
8
Module Voltage Interface Levels
LVTTL
01
9
SDRAM Cycle Time, tCK
(CAS Latency = 3)
7ns (-13E)
7.5ns (-133
8ns (-10E)
70
75
80
75
80
10
SDRAM Access From CLK, tAC
(CAS Latency = 3)
5.4ns (-13E/-133)
6ns (-10E)
54
60
54
60
11
Module Configuration Type
ECC
02
12
Refresh Rate/Type
15.625s/SELF
80
13
SDRAM Width (Primary SDRAM)
808
08
14
Error-checking SDRAM Data Width
808
08
15
Minimum Clock Delay from Back-to-Back Random
Column Addresses,tCCD
101
01
16
Burst Lengths Supported
1, 2, 4, 8, PAGE
8F
17
Number of Banks on SDRAM Device
404
04
18
CAS Latencies Supported
2, 3
06
19
CS Latency
001
01
20
WE Latency
001
01
21
SDRAM Module Attributes
UNBUFFERED
00
22
SDRAM Device Attributes: General
0E
23
SDRAM Cycle Time , tCK
(CAS Latency = 2)
7.5ns (13E)
10ns (-133/-10E)
75
A0
75
A0
24
SDRAM Access from CLK, tAC
(CAS Latency = 2)
5.4ns (-13E)
6ns (-133/-10E)
54
60
54
60
25
SDRAM Cycle Time, tCK
(CAS Latency = 1)
00
26
SDRAM Access from CLK, tAC
(CAS Latency = 1)
00
27
Minimum Row Precharge Time, tRP
15ns (-13E)
20ns (-133/-10E)
0F
14
oF
14
28
Minimum Row Active to Row Active, tRRD
14ns (-13E)
15ns (-133)
20ns (-10E)
0E
0F
14
0E
0F
14
29
Minimum RAS# to CAS# Delay, tRCD
15ns (-13E)
20ns (-133/-10E)
0F
14
0F
14
30
Minimum RAS# Pulse Width, tRAS
(See note 1)
45ns (-13E)
44ns (-133)
50ns (-10E)
2D
2C
32
2D
2C
32
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相关代理商/技术参数 |
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| MT18LSDT1672G-10EC2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT1672G-133C2 | 制造商:Micron Technology Inc 功能描述:16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
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| MT18LSDT3272 | 制造商:Micron Technology Inc 功能描述:256MB 32MX72 SDRAM MODULE DIMM 3.3V REGISTERED - Trays |
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