- 您现在的位置：买卖IC网 > PDF目录186919 > MT18LSDT1672AY-13EXX 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 PDF资料下载
参数资料
| 型号： | MT18LSDT1672AY-13EXX |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封装： | LEAD FREE, MO-161, DIMM-168 |
| 文件页数： | 6/25页 |
| 文件大小： | 553K |
| 代理商： | MT18LSDT1672AY-13EXX |
64MB x72, ECC, SR), 128MB (x72, ECC, DR)
168-PIN SDRAM UDIMM
09005aef807b3709
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD9_18C8_16x72AG.fm - Rev. E 6/04 EN
14
2004 Micron Technology, Inc.
Table 12:
IDD Specifications and Conditions – 64MB
Notes: 1, 5, 6, 11, 13; notes appear on page 18; VDD, VDDQ = +3.3V ±0.3V; SDRAM component values only
MAX
PARAMETER/CONDITION
SYMBOL
-13E
-133
-10E
UNITS
NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
tRC = tRC (MIN)
IDD1
1,125 1,035
855
mA
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
IDD2
18
mA
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after tRCD met; No accesses in progress
IDD3
405
315
mA
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
IDD4
1,350 1,260 1,080
mA
AUTO REFRESH CURRENT
tRFC = tRFC (MIN)
IDD5
2,070 1,890 1,710
mA
CKE = HIGH; CS# = HIGH
tRFC = 15.625s
IDD6
27
mA
SELF REFRESH CURRENT: CKE
≤ 0.2V
IDD7
99
9
mA
Table 13:
IDD Specifications and Conditions – 128MB
Notes: 1, 5, 6, 11, 13; notes appear on page 18; VDD, VDDQ = +3.3V ±0.3V; SDRAM component values only
MAX
PARAMETER/CONDITION
SYMBOL
-13E
-133
-10E
UNITS
NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
tRC = tRC (MIN)
IDD1a
1,143 1,053
873
mA
STANDBY CURRENT: Power-Down Mode; All device banks idle;
CKE = LOW
IDD2b
36
mA
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after tRCD met; No accesses in progress
IDD3a
423
333
mA
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
IDD4a
1,368 1,278 1,098
mA
AUTO REFRESH CURRENT
tRFC = tRFC (MIN)
IDD5b
4,140 3,780 3,420
mA
CKE = HIGH; CS# = HIGH
tRFC = 15.625s
IDD6b
54
mA
SELF REFRESH CURRENT: CKE
≤ 0.2V
IDD7b
18
mA
NOTE:
a - Value calculated as one module rank in this condition, and all other module ranks in Power-Down Mode (IDD2).
b - Value calculated reflects all module ranks in this condition.
相关PDF资料 |
PDF描述 |
|---|---|
| MT18VDDF12872HG-40BXX | 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200 |
| MT18VDDT12872Y-262XX | 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| MT28C256532W18DFT-F606P85TBWT | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| MT28C256564W18DBT-F706P70TBWT | SPECIALTY MEMORY CIRCUIT, PBGA88 |
| MT28C256564W18DFT-F605P85TTWT | SPECIALTY MEMORY CIRCUIT, PBGA88 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT18LSDT1672G-10EC2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT1672G-133C2 | 制造商:Micron Technology Inc 功能描述:16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| MT18LSDT1672G-13EG3 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1.125GBIT 168RDIMM - Trays |
| MT18LSDT3272 | 制造商:Micron Technology Inc 功能描述:256MB 32MX72 SDRAM MODULE DIMM 3.3V REGISTERED - Trays |
| MT18LSDT3272AG-10EB1 | 制造商:Micron Technology Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。