参数资料
型号: MT48LC8M16LFF4-10IT:G
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
封装: 8 X 8 MM, VFBGA-54
文件页数: 73/80页
文件大小: 2775K
PDF: 09005aef807f4885/Source: 09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
75
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Timing Diagrams
Figure 54:
Alternating Bank Write Accesses
Notes:
1. For this example, BL = 4.
2. x16: A9 and A11 = “Don’t Care.”
x32: A8, A9, and A11 = “Don’t Care.”
DON’T CARE
tCH
tCL
CLK
DQ
DIN m
tDH
tDS
DIN m + 1
DIN m + 2
DIN m + 3
COMMAND
tCMH
tCMS
NOP
ACTIVE
NOP
WRITE
NOP
ACTIVE
tDH
tDS
tDH
tDS
tDH
tDS
ACTIVE
WRITE
DIN b
tDH
tDS
DIN b + 1
DIN b + 3
tDH
tDS
tDH
tDS
ENABLE AUTO PRECHARGE
DQMU, DQML
A0–A9, A11
BA0, BA1
A10
tCMH
tCMS
tAH
tAS
tAH
tAS
tAH
tAS
ROW
ENABLE AUTO PRECHARGE
ROW
BANK 0
BANK 1
BANK 0
BANK 1
CKE
tCKH
tCKS
DIN b + 2
tDH
tDS
COLUMN b 2
COLUMN m 2
t
tRAS - BANK 0
tRCD - BANK 0
t
RCD - BANK 0
tWR - BANK 0
WR - BANK 1
tRCD - BANK 1
t
RC - BANK 0
RRD
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
tCK
RP - BANK 0
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相关代理商/技术参数
参数描述
MT48LC8M16LFF4-75M IT 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 128MBIT 3.3V 54FBGA - Trays